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1N5400-BC02-BP PDF预览

1N5400-BC02-BP

更新时间: 2024-09-16 14:39:07
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 103K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN

1N5400-BC02-BP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:DO-201AD
包装说明:DO-201AD, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.05
Is Samacsys:N其他特性:METALLURGICALLY BONDED, LOW LEAKAGE CURRENT
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:200 A元件数量:1
相数:1端子数量:2
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:50 V表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5400-BC02-BP 数据手册

 浏览型号1N5400-BC02-BP的Datasheet PDF文件第2页浏览型号1N5400-BC02-BP的Datasheet PDF文件第3页 
M C C  
1N5400-BC02  
THRU  
1N5408-BC02  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
·
·
·
Low Current Leakage  
Metalurgically Bonded Construction  
Low Forward Voltage  
3 Amp Rectifier  
50 to 1000 Volts  
High Current Capability  
Maximum Ratings  
DO-201AD  
·
·
·
Operating Temperature: -55°C to +125°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 30°C/W Junction To Lead  
D
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
E
1N5400-BC02  
1N5401-BC02  
1N5402-BC02  
1N5404-BC02  
1N5406-BC02  
1N5407-BC02  
1N5408-BC02  
---  
---  
---  
---  
---  
---  
---  
35V  
70V  
140V  
50V  
100V  
200V  
A
C
280V  
420V  
560V  
700V  
400V  
600V  
800V  
1000V  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
B
Average Forward  
Current  
IF(AV)  
3.0A  
TA = 105°C  
Peak Forward Surge  
Current  
IFSM  
200A  
8.3ms, half sine  
DIMENSIONS  
Maximum  
INCHES  
MIN  
.590  
.290  
---  
MM  
MIN  
15.0  
7.37  
---  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.0V  
IFM = 3.0A;  
TJ = 25°C*  
DIM  
MAX  
MAX  
NOTE  
A
B
C
D
E
.630  
.310  
.370  
.250  
.052  
16.0  
7.87  
9.50  
6.40  
1.30  
---  
.048  
---  
1.20  
5.0mA  
50mA  
TJ = 25°C  
TJ = 125°C  
Typical Junction  
Capacitance  
CJ  
40pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  
Revision: 3  
2002/12/31  

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