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1N5399S PDF预览

1N5399S

更新时间: 2024-11-22 22:38:03
品牌 Logo 应用领域
美台 - DIODES 整流二极管功效
页数 文件大小 规格书
2页 61K
描述
1.5A RECTIFIER

1N5399S 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-41包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.09Is Samacsys:N
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:50 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):245
认证状态:Not Qualified最大重复峰值反向电压:1000 V
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:5
Base Number Matches:1

1N5399S 数据手册

 浏览型号1N5399S的Datasheet PDF文件第2页 
1N5391/S - 1N5399/S  
1.5A RECTIFIER  
Features  
·
·
·
Diffused Junction  
Fast Switching for High Efficiency  
High Current Capability and Low Forward  
Voltage Drop  
A
B
A
·
·
·
Low Reverse Leakage Current  
Surge Overload Rating to 50A Peak  
Plastic Material - UL Flammability  
Classification Rating 94V-0  
C
D
DO-41 Plastic  
DO-15  
Mechanical Data  
Dim  
A
Min  
25.40  
4.06  
0.71  
2.00  
Max  
¾
Min  
Max  
¾
25.40  
5.50  
·
·
Case: Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
B
5.21  
0.864  
2.72  
7.62  
0.889  
3.60  
C
0.686  
2.60  
·
·
Polarity: Cathode Band  
D
Weight: DO-41 0.30 grams (approx.)  
All Dimensions in mm  
DO-15 0.40 grams (approx.)  
·
·
Mounting Position: Any  
Marking: Type Number  
“S” Suffix Designates DO-41 Package  
No Suffix Designates DO-15 Package  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
Characteristic  
Symbol  
Unit  
5391/S 5392/S 5393/S 5395/S 5397/S 5398/S 5399/S  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
280  
1.5  
V
A
Average Rectified Output Current  
(Note 1)  
@ TA = 70°C  
Non-Repetitive Peak Forward Surge Current 8.3ms  
single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
50  
A
Forward Voltage Drop  
@ IF = 1.5A  
VFM  
IRM  
1.1  
V
5.0  
50  
Peak Reverse Leakage Current  
at Rated DC Blocking Voltage  
@ TA 25°C  
=
mA  
@ TA = 100°C  
Cj  
Typical Junction Capacitance (Note 2)  
20  
25  
pF  
K/W  
K/W  
°C  
RqJL  
Typical Thermal Resistance Junction to Lead  
RqJA  
55  
Typical Thermal Resistance Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Notes:  
1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.  
DS28003 Rev. D-2  
1 of 2  
1N5391/S-1N5399/S  

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