1N5399-T3

更新时间： 2024-11-25 22:38:03

品牌	Logo	应用领域
WTE		整流二极管
页数	文件大小	规格书
3页	47K
描述
1.5A SILICON RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N5399-T3 数据手册

WTE

PO WER SEM ICONDUCTORS

1N5391 – 1N5399

1.5A SILICON RECTIFIER

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Mechanical Data

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.40 grams (approx.)

Mounting Position: Any

DO-15

Dim

Min

25.4

5.50

0.71

2.60

Max

—

7.62

0.864

3.60

Marking: Type Number

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

5391

5392

5393

5395

5397

5398

5399

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

1.5

Average Rectified Output Current

(Note 1)

@T_A= 75°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.5A

V^FM

I^RM

1.0

µA

Peak Reverse Current

At Rated DC Blocking Voltage @T_A= 100°C

@T_A= 25°C

5.0

Typical Junction Capacitance (Note 2)

C^j

Typical Thermal Resistance Junction to Ambient

(Note 1)

R^ꢀ^JA

K/W

Operating Temperature Range

Storage Temperature Range

T^j

-65 to +125

-65 to +150

°C

T^STG

*Glass passivated forms are available upon request

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

1N5391 – 1N5399

1 of 3

12 3

中文翻译

下载PDF

与1N5399-T3相关器件

型号	品牌	获取价格	描述	数据表
1N5399-TB	WTE	获取价格	1.5A SILICON RECTIFIER
1N5399-TB-LF	WTE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-15, ROHS COMPLIANT, P
1N5399TR	CENTRAL	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-41,
1N5399TRLEADFREE	CENTRAL	获取价格	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-41,
1N539XGP	VISHAY	获取价格	Glass Passivated Junction Plastic Rectifier
1N53A	SKYWORKS	获取价格	Mixer Diode, 800ohm Z(V) Max, Silicon
1N53AM	SKYWORKS	获取价格	Mixer Diode, 800ohm Z(V) Max, 11.1dB Noise Figure, Silicon
1N53AMR	SKYWORKS	获取价格	Mixer Diode, 800ohm Z(V) Max, 11.1dB Noise Figure, Silicon
1N53AR	SKYWORKS	获取价格	Mixer Diode, 800ohm Z(V) Max, 11.1dB Noise Figure, Silicon
1N53B	ASI	获取价格	暂无描述