Datasheet > 1N539XGP

1N539XGP

更新时间： 2024-02-05 20:08:29

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	77K
描述
Glass Passivated Junction Plastic Rectifier

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1N539XGP 数据手册

1N539xGP

Vishay General Semiconductor

www.vishay.com

Glass Passivated Junction Plastic Rectifier

FEATURES

• Superectifier structure for high reliability

application

SUPERECTIFIER^®

• Cavity-free glass-passivated junction

• Low forward voltage drop

• Low leakage current, typical I_Rless than 0.1 μA

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

DO-204AC (DO-15)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters, and freewheeling diodes application

PRIMARY CHARACTERISTICS

I_F(AV)

1.5 A

V_RRM

I_FSM

50 V to 1000 V

50 A

MECHANICAL DATA

I_R

5.0 μA

Case: DO-204AC, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

V_F

1.4 V

T_Jmax.

Package

Diode variations

175 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

DO-204AC (DO-15)

Single die

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted) ⁽¹⁾

1N53

91GP

1N53

92GP

1N53

93GP

1N53

94GP

1N53

95GP

1N53

96GP

1N53

97GP

1N53

98GP

1N53

99GP

PARAMETER

SYMBOL

UNIT

Maximum repetitive peak reverse

voltage

V_RRM

100

200

300

400

500

600

800

1000

Maximum RMS voltage

V_RMS

V_DC

140

200

210

300

280

400

350

500

420

600

560

800

700

Maximum DC blocking voltage

100

1000

Maximum average forward

rectified current 0.375" (9.5 mm)

lead length at T_L= 70 °C

I_F(AV)

1.5

Peak forward surge current

8.3 ms single half sine-wave

super-imposed on rated load

I_FSM

Maximum full load reverse

current, full cycle average 0.375"

(9.5 mm) lead length at T_A= 70 °C

I_R(AV)

300

μA

°C

Operating junction and storage

temperature range

T_J, T_STG

-65 to +175

Note

(1)

JEDEC^®registered values

Revision: 13-Jun-16

Document Number: 88515

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与1N539XGP相关器件

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