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1N5400 PDF预览

1N5400

更新时间: 2024-11-22 22:34:59
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 81K
描述
3 Amp Rectifier 50 - 1000 Volts

1N5400 数据手册

 浏览型号1N5400的Datasheet PDF文件第2页浏览型号1N5400的Datasheet PDF文件第3页 
M C C  
1N5400  
THRU  
1N5408  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
·
·
·
·
Low Current Leakage  
3 Amp Rectifier  
50 - 1000 Volts  
Metalurgically Bonded Construction  
Low Forward Voltage  
High Current Capability  
Maximum Ratings  
DO-201AD  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 30°C/W Junction To Lead  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
100V  
200V  
400V  
500V  
600V  
800V  
1000V  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
D
1N5400  
1N5401  
1N5402  
1N5404  
1N5405  
1N5406  
1N5407  
1N5408  
---  
---  
---  
---  
---  
---  
---  
---  
35V  
70V  
50V  
100V  
200V  
400V  
500V  
600V  
800V  
1000V  
A
Cathode  
Mark  
140V  
280V  
350V  
420V  
560V  
700V  
B
D
C
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
3.0A  
TA = 105°C  
Peak Forward Surge  
Current  
IFSM  
200A  
8.3ms, half sine  
DIMENSIONS  
Maximum  
INCHES  
MIN  
---  
---  
.048  
1.000  
MM  
MIN  
---  
---  
1.20  
25.40  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.0V  
IFM = 3.0A;  
TJ = 25°C*  
DIM  
A
B
C
D
MAX  
.370  
.250  
.052  
---  
MAX  
9.50  
6.40  
1.30  
---  
NOTE  
5.0mA  
50mA  
TJ = 25°C  
TJ = 125°C  
Typical Junction  
Capacitance  
CJ  
40pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  

1N5400 替代型号

型号 品牌 替代类型 描述 数据表
1N5400-E3/54 VISHAY

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