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1N5399G

更新时间: 2024-02-03 23:57:55
品牌 Logo 应用领域
扬杰 - YANGJIE 二极管
页数 文件大小 规格书
4页 471K
描述
Rectifier Diode,

1N5399G 技术参数

生命周期:Contact Manufacturer包装说明:O-PALF-W2
Reach Compliance Code:unknown风险等级:5.03
Is Samacsys:N应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJEDEC-95代码:DO-15
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM最大重复峰值反向电压:1000 V
最大反向电流:5 µA子类别:Rectifier Diodes
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N5399G 数据手册

 浏览型号1N5399G的Datasheet PDF文件第2页浏览型号1N5399G的Datasheet PDF文件第3页浏览型号1N5399G的Datasheet PDF文件第4页 
RoHS  
1N5391G THRU 1N5399G  
General Purpose Rectifier  
COMPLIANT  
Features  
High efficiency  
High current capability  
High reliability  
High surge current capability  
Low power loss  
Glass passivated chip junction  
● Solder dip 275 °C max. 7 s, per JESD 22-B106  
Mechanical Data  
ackage: DO-204AC(DO-15)  
P
Molding compound meets UL 94 V-0 flammability rating,  
RoHS-compliant  
Terminals: Tin plated leads, solderable per J-STD-  
002 and JESD22-B102  
Color band denotes cathode end  
Polarity:  
(Ta=25Unless otherwise specified)  
Maximum Ratings  
1N5391G 1N5392G 1N5393G 1N5395G 1N5397G 1N5398G 1N5399G  
PARAMETER  
SYMBOL UNIT  
1N5391G 1N5392G 1N5393G 1N5395G 1N5397G 1N5398G 1N5399G  
Device marking code  
VRRM  
V
A
50  
100  
200  
400  
1.5  
600  
800  
1000  
Repetitive Peak Reverse Voltage  
Average Forward Current  
@60Hz sine wave, Resistance load, Ta =50  
IF(AV)  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Ta=25℃  
IFSM  
A
50  
T
-55 ~+150  
-55~+150  
Storage Temperature  
Junction Temperature  
stg  
T
j
T =25Unless otherwise specified)  
Electrical Characteristics  
a
1N5391G 1N5392G 1N5393G 1N5395G 1N5397G 1N5398G 1N5399G  
PARAMETER  
SYMBOL  
UNIT TEST CONDITIONS  
Maximum instantaneous  
forward voltage drop per diode  
VFM  
IFM=1.5A  
V
1.1  
IRRM1  
IRRM2  
T =25℃  
2.5  
50  
a
Maximum DC reverse current  
at rated DC blocking voltage  
per diode  
μA  
T =100℃  
a
Measured at 1MHZ  
and Applied Reverse  
Voltage of 4.0 V.D.C.  
Typicaljunctioncapacitance  
Cj  
pF  
15  
Thermal Characteristics T =25Unless otherwise specified)  
a
1N5391G  
1N5392G  
1N5393G  
1N5395G  
1N5397G  
1N5398G  
1N5399G  
PARAMETER  
SYMBOL  
UNIT  
Rθ  
Thermal Resistance(Typical)  
/W  
50  
J-A  
1 / 4  
S-A025  
Rev.2.1,28-Apr-14  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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