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1N5399GP/4E PDF预览

1N5399GP/4E

更新时间: 2024-11-26 14:39:07
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 72K
描述
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

1N5399GP/4E 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:DO-15包装说明:PLASTIC, DO-15, 2 PIN
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.66Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-204ACJESD-30 代码:O-PALF-W2
JESD-609代码:e0最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1000 V
最大反向恢复时间:2 µs表面贴装:NO
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5399GP/4E 数据手册

 浏览型号1N5399GP/4E的Datasheet PDF文件第2页浏览型号1N5399GP/4E的Datasheet PDF文件第3页浏览型号1N5399GP/4E的Datasheet PDF文件第4页 
1N5391GP thru 1N5399GP  
Vishay General Semiconductor  
Glass Passivated Junction Rectifier  
FEATURES  
• Superectifier structure for high reliability  
application  
SUPERECTIFIER®  
DO-204AC (DO-15)  
• Cavity-free glass-passivated junction  
• Low forward voltage drop  
• Low leakage current, typical IR less than 0.1 μA  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes application  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.5 A  
MECHANICAL DATA  
VRRM  
IFSM  
IR  
50 V to 1000 V  
50 A  
Case: DO-204AC, molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
5.0 μA  
VF  
1.4 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TJ max.  
175 °C  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) (1)  
1N53  
91GP  
1N53  
92GP  
1N53  
93GP  
1N53  
94GP  
1N53  
95GP  
1N53  
96GP  
1N53  
97GP  
1N53  
98GP  
1N53  
99GP  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse  
voltage  
VRRM  
50  
100  
200  
300  
400  
500  
600  
800  
1000  
V
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
210  
300  
280  
400  
350  
500  
420  
600  
560  
800  
700  
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward  
rectified current 0.375" (9.5 mm)  
lead length at TL = 70 °C  
IF(AV)  
1.5  
50  
A
A
Peak forward surge current  
8.3 ms single half sine-wave  
super-imposed on rated load  
IFSM  
Maximum full load reverse  
current, full cycle average 0.375"  
(9.5 mm) lead length at TA = 70 °C  
IR(AV)  
300  
μA  
°C  
Operating junction and storage  
temperature range  
TJ, TSTG  
- 65 to + 175  
Note  
(1)  
JEDEC registered values  
Document Number: 88515  
Revision: 15-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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