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1N5399-G PDF预览

1N5399-G

更新时间: 2024-11-23 07:20:03
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
2页 54K
描述
Axial Silastic Guard Junction Standard Rectifier

1N5399-G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.82
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 V最大非重复峰值正向电流:30 A
元件数量:1最高工作温度:150 °C
最大输出电流:1.5 A最大重复峰值反向电压:1000 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY

1N5399-G 数据手册

 浏览型号1N5399-G的Datasheet PDF文件第2页 
Axial Silastic Guard Junction Standard Rectifier  
1N5391-G Thru. 1N5399-G  
Voltage: 50 to 1000 Volts  
Forward Current: 1.5 Amps  
RoHS Device  
Features  
DO-15  
-Low cost construction.  
0.034(0.9)  
0.028(0.7)  
DIA.  
-Low forward voltage drop.  
1.0(25.4)  
MIN.  
-Low reverse leakage.  
-High forward surge current capability.  
-High temperature soldering guarantee: 260°C/10  
seconds, 0.375" (9.5mm) lead length at 5lbs  
(2.3kg) tension.  
0.300(7.6)  
0.230(5.8)  
Mechanical Data  
-Case: transfer-molded plastic.  
0.140(3.6)  
0.104(2.6)  
DIA.  
-Epoxy: UL94V-0 rate flame retardant.  
1.0(25.4)  
MIN.  
-Lead: Plated axial lead, solderable per MIL-STD-  
202E, method 208C.  
-Polarity: Cathode indicated by polarity band.  
-Mounting position: Any.  
Dimensions in inches and (millimeters)  
-Weight: 0.012 ounce, 0.33grams.  
Maximum Ratings and Electrical Characteristics  
Ratings at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load derate current by 20%.  
1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399  
Unit  
Symbol  
Parameter  
-G  
-G  
-G  
-G  
-G  
-G  
-G  
-G  
-G  
Max.repetitive peak reverse voltage  
Max.RMS voltage  
VRRM  
VRMS  
VDC  
50  
100  
200  
300  
400  
500  
600  
800  
1000  
V
V
V
35  
50  
70  
140  
200  
210  
300  
280  
400  
350  
500  
420  
600  
560  
800  
700  
Max.DC blocking voltage  
100  
1000  
Max. average forward rectified  
current , 0.375"(9.5mm) lead length at  
TA=75 OC  
I(AV)  
IFSM  
1.5  
A
A
Peak forward surge current, 8.3mS  
single half sine wave superimpose on  
rated load (JEDEC method)  
30  
Max. instantaneous forward voltage  
at IF=1.0A  
VF  
IR  
1.1  
V
Max. DC reverse current at TA=25 OC  
rated DC blocking voltage TA=100 OC  
5.0  
50  
μA  
Max. full load reverse current, full  
cycle average 0.375"(9.5mm) lead  
length at TL=75 OC  
IR(AV)  
30  
μA  
CJ  
RθJA  
TJ  
13  
pF  
OC/W  
OC  
Typical junction capacitance (Note 1)  
Typical thermal resistance (Note 2)  
Operating junction temperature range  
Storage temperature range  
50  
-55 to +150  
-55 to +150  
OC  
TSTG  
Notes:  
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C. board mounted with 0.2"×0.2" (5.0×  
5.0mm) copper pads.  
REV:A  
Page 1  
QW-BB021  
Comchip Technology CO., LTD.  

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