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1N5399GP/4H-E3 PDF预览

1N5399GP/4H-E3

更新时间: 2024-11-27 05:39:59
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 326K
描述
DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Rectifier Diode

1N5399GP/4H-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-15
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.05
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-204ACJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:1.5 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:1000 V
最大反向恢复时间:2 µs表面贴装:NO
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT APPLICABLE

1N5399GP/4H-E3 数据手册

 浏览型号1N5399GP/4H-E3的Datasheet PDF文件第2页浏览型号1N5399GP/4H-E3的Datasheet PDF文件第3页浏览型号1N5399GP/4H-E3的Datasheet PDF文件第4页 
1N5391GP thru 1N5399GP  
Vishay General Semiconductor  
Glass Passivated Junction Rectifier  
®
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
1.5 A  
50 V to 1000 V  
50 A  
5.0 µA  
*
VF  
1.4 V  
d
e
t
n
e
Tj max.  
175 °C  
t
a
P
DO-204AC (DO-15)  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602, and  
brazed-lead assembly  
by Patent No. 3,930,306  
Features  
Mechanical Data  
• Superectifier structure for High Reliability  
application  
Case: DO-204AC, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
• Cavity-free glass-passivated junction  
• Low forward voltage drop  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low leakage current, typical I less than 0.1 µA  
R
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
application  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol  
1N53  
91GP  
1N53  
92GP  
1N53  
93GP  
1N53  
94GP  
1N53  
95GP  
1N53  
96GP  
1N53  
97GP  
1N53  
98GP  
1N53 Unit  
99GP  
* Maximum repetitive peak  
reverse voltage  
VRRM  
50  
100  
200  
300  
400  
500  
600  
800  
1000  
V
* Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
210  
300  
280  
400  
350  
500  
420  
600  
560  
800  
700  
V
V
* Maximum DC blocking  
voltage  
100  
1000  
* Maximum average forward  
rectified current 0.375" (9.5  
mm) lead length at TL = 70 °C  
IF(AV)  
1.5  
A
* Peak forward surge current  
8.3 ms single half sine-wave  
super-imposed on rated load  
IFSM  
50  
A
* Maximum full load reverse  
current, full cycle average  
0.375" (9.5 mm) lead length at  
IR(AV)  
300  
µA  
TA = 70 °C  
* Operating junction and  
TJ,TSTG  
- 65 to + 175  
°C  
storage temperature range  
Document Number 88515  
14-Oct-05  
www.vishay.com  
1

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