1N5276B

更新时间： 2024-09-16 12:50:39

品牌	Logo	应用领域
鲁光 - LGE		稳压二极管齐纳二极管测试
页数	文件大小	规格书
3页	212K
描述
Zener Diodes

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技术参数
数据手册

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1N5276B 技术参数

Case Style：	DO-35	Pd（W）：	0.5
VZ(Min)：	-	VZ(Nom)：	150
VZ(Max)：	-	IZT(mA)：	0.85
IR(uA)：	0.1	VR(V)：	114
class：	Diodes

1N5276B 数据手册

1N5221B-1N5279B

Zener Diodes

POWER DISSIPATION: 500 mW

DO-35(GLASS)

Features

Silicon planar power zener diodes

Standard Zener voltage tolerance is ±5%. With a "B"

suffix. Other tolerances are available upon request.

Mechanical Data

Case:DO-35, Glass Case

Terminals: Solderable per MIL-STD-202, Method 208

Polarity: Cathode Band

Dimensions in millimeters

Marking: Type Number

Approx. Weight: 0.13 grams.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.

SYMBOL

VALUE

UNIT

Zener current (see Table "Characteristics")

500¹⁾

175

P_tot

T_J

Power dissipation at T_amb=25

Junction temperature

T_s

-55---+175

Storage temperature range

SYMBOL

R_θ_JA

MIN

TYP

MAX

300¹⁾

1.2

UNIT

Thermal resistance junction to ambient

Forw ard voltage at I_F=200mA

NOTES: (1) Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.

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mail:lge@luguang.cn

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