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1N5196UR PDF预览

1N5196UR

更新时间: 2024-02-07 10:11:17
品牌 Logo 应用领域
CDI-DIODE 整流二极管
页数 文件大小 规格书
2页 36K
描述
GENERAL PURPOSE SILICON DIODES

1N5196UR 技术参数

是否Rohs认证:不符合生命周期:Active
零件包装代码:DO-213AA包装说明:HERMETIC SEALED, GLASS PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.27Is Samacsys:N
其他特性:METALLURGICALLY BONDED外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-213AA
JESD-30 代码:O-LELF-R2JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:2最大输出电流:0.2 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.5 W认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5196UR 数据手册

 浏览型号1N5196UR的Datasheet PDF文件第2页 
1N5194UR  
1N5195UR  
1N5196UR  
CDLL5194  
CDLL5195  
CDLL5196  
• AVAILABLE IN JAN, JANTX AND JANTXV  
PER MIL-PRF-19500/118  
• GENERAL PURPOSE SILICON DIODES  
• METALLURGICALLY BONDED  
MAXIMUM RATINGS  
Operating Temperature: -65°C to +175°C  
Storage Temperature: -65°C to +175°C  
Operating Current: 200 mA  
Derating: 1.2mA/°C from 25ºC to 150ºC  
1.0mA/°C from 150ºC to 175ºC  
Forward Current: 650mA  
MILLIMETERS  
INCHES  
DIM MIN MAX MIN MAX  
D
F
1.60  
0.41  
3.30  
1.70 0.063 0.067  
0.55 0.016 0.022  
3.70 .130 .146  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified  
G
G1  
S
2.54 REF.  
0.03 MIN.  
.100 REF.  
.001 MIN.  
V
V
I
I
I
FSM  
RM  
RWM  
O
O
TYPE  
T
= +150°C  
T
=1/120 S  
=25ºC  
A
P
T
A
V
V
mA  
mA  
A
(pk)  
(pk)  
FIGURE 1  
CDLL, 1N5194UR  
CDLL, 1N5195UR  
CDLL, 1N5196UR  
80  
180  
250  
70  
180  
225  
200  
200  
200  
50  
50  
50  
2
2
2
DESIGN DATA  
CASE: DO-213AA, Hermetically sealed  
glass case. (MELF, SOD-80, LL34)  
V
F
@100mA  
I
at V  
I
at V  
I
at V  
R1  
RWM  
R2  
T
RM  
R3  
T
RWM  
TYPE  
=25ºC  
= 150°C  
A
A
LEAD FINISH: Tin / Lead  
V dc  
nA dc  
µA  
µA dc  
CDLL, 1N5194UR  
CDLL, 1N5195UR  
CDLL, 1N5196UR  
0.8 - 1.0  
0.8 - 1.0  
0.8 - 1.0  
25  
25  
25  
100  
100  
100  
5
5
5
THERMAL RESISTANCE: (R  
100 ˚C/W maximum  
):  
OJEC  
THERMAL IMPEDANCE: (Z  
˚C/W maximum  
): 70  
OJX  
POLARITY: Cathode end is banded.  
MOUNTING POSITION: Any.  
MOUNTING SURFACE SELECTION:  
The Axial Coefficient of Expansion  
(COE) Of this Device is Approximately  
+6PPM/°C. The COE of the Mounting  
Surface System Should Be Selected To  
Provide A Suitable Match With This  
Device.  
22 COREY STREET, MELROSE, MASSACHUSETTS 02176  
PHONE (781) 665-1071  
WEBSITE: http://www.cdi-diodes.com  
FAX (781) 665-7379  
E-mail: mail@cdi-diodes.com  

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