Datasheet > 1N5196UR_08

1N5196UR_08

更新时间： 2024-11-15 07:21:59

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管开关
页数	文件大小	规格书
1页	37K
描述
SWITCHING DIODE

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数据手册

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1N5196UR_08 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

SWITCHING DIODE

– METALLURGICALLY BONDED

– HERMETICALLY SEALED

– DOUBLE PLUG CONSTRUCTION

Qualified per MIL-PRF-19500/118

DEVICES

QUALIFIED LEVELS

JAN

1N5196UR

JANTX

JANTXV

MAXIMUM RATING AT 25°C

.016" - .022"

.41mm - .55mm

Operating Temperature:

Storage Temperature:

-65°C to +175°C

Surge Current, sine, 8.3mS:

Total Power Dissipation, 25°C:

Max. Operating Current, 25°C:

D.C. Reverse Voltage (VRWM):

500mW

200mA

225V

.063" - .067"

1.60mm - 1.70mm

DC ELECTRICAL CHARACTERISTICS

V_F

I_R

.130" - .146"

3.30mm - 3.70mm

Ambient

(°C)

I_F

Min

Max

Ambient

(°C)

Min

µA

Max

µA

V (dc)

225

100

0.8

1.0

1.2

0.025

1.0

-55

250

150

225

5.0

MIN .001"

.03mm

DESIGN DATA

Case: Hermetically sealed glass package per

MIL-PRF-19500/118 DO-213AA outline

Lead Material: Copper clad steel

Lead Finish: Tin / Lead

Thermal Impedance (Z_θJX): 70°C/W maximum

Polarity: Cathode end is banded

LDS-0036 Rev. 1 (072072)

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