Datasheet > 1N459AT50R

1N459AT50R

更新时间： 2024-11-15 05:44:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	37K
描述
Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,

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数据手册

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1N459AT50R 数据手册

1N/FDLL 456/A - 1N/FDLL 459/A

COLOR BAND MARKING

DEVICE

1ST BAND 2ND BAND

FDLL456

BROWN

WHITE

BLACK

BROWN

RED

FDLL456A BROWN

FDLL457 RED

FDLL457A RED

FDLL458 RED

FDLL458A RED

FDLL459 RED

LL-34

THE PLACEMENT OF THE EXPANSION GAP

HAS NO RELATIONSHIP TO THE LOCATION

OF THE CATHODE TERMINAL

DO-35

FDLL459A RED

RED

High Conductance Low Leakage Diode

Sourced from Process 1M. See MMBD1501/A-1505/A for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

W_IV

Working Inverse Voltage

125

175

200

456/A

457/A

458/A

459/A

I_O

Average Rectified Current

DC Forward Current

I_F

500

600

Recurrent Peak Forward Current

i_f

Peak Forward Surge Current

Pulse width = 1.0 second

i_f(surge)

1.0

4.0

Pulse width = 1.0 microsecond

Storage Temperature Range

-65 to +200

T_stg

T_J

Operating Junction Temperature

175

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

1N / FDLL 456/A - 459/A

P_D

Total Device Dissipation

Derate above 25 C

Thermal Resistance, Junction to Ambient

500

3.33

300

mW/ C

R_θ

C/W

1997 Fairchild Semiconductor Corporation

12 3

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