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1N459TR PDF预览

1N459TR

更新时间: 2023-09-03 20:31:59
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
3页 185K
描述
高电导、低泄漏二极管

1N459TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DO-35
包装说明:O-PALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.13
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-35JESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:4 A
元件数量:1端子数量:2
最高工作温度:175 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.5 W认证状态:Not Qualified
最大重复峰值反向电压:200 V子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N459TR 数据手册

 浏览型号1N459TR的Datasheet PDF文件第2页浏览型号1N459TR的Datasheet PDF文件第3页 
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1N459TR 替代型号

型号 品牌 替代类型 描述 数据表
1N459ATR ONSEMI

类似代替

高电导、低泄漏二极管

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