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1N459TR PDF预览

1N459TR

更新时间: 2024-11-15 11:12:55
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
3页 185K
描述
高电导、低泄漏二极管

1N459TR 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70Factory Lead Time:1 week
风险等级:0.92外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-35
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:4 A元件数量:1
端子数量:2最高工作温度:175 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.5 W
认证状态:Not Qualified最大重复峰值反向电压:200 V
子类别:Rectifier Diodes表面贴装:NO
端子面层:Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N459TR 数据手册

 浏览型号1N459TR的Datasheet PDF文件第2页浏览型号1N459TR的Datasheet PDF文件第3页 
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1N459TR 替代型号

型号 品牌 替代类型 描述 数据表
1N459ATR ONSEMI

类似代替

高电导、低泄漏二极管

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