Datasheet > 1N459ATR

1N459ATR

更新时间： 2024-09-25 11:12:55

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
3页	185K
描述
高电导、低泄漏二极管

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技术参数
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1N459ATR 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	O-PALF-W2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.70
风险等级：	1.02	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	1 V
JEDEC-95代码：	DO-35	JESD-30 代码：	O-PALF-W2
JESD-609代码：	e3	最大非重复峰值正向电流：	4 A
元件数量：	1	端子数量：	2
最高工作温度：	175 °C	最大输出电流：	0.2 A
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
最大功率耗散：	0.5 W	认证状态：	Not Qualified
最大重复峰值反向电压：	200 V	子类别：	Rectifier Diodes
表面贴装：	NO	端子面层：	Tin (Sn)
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

1N459ATR 数据手册

ON Semiconductor

Is Now

To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

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中文翻译

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1N459ATR 替代型号

型号	品牌	替代类型	描述	数据表
1N458A	ONSEMI	完全替代	高电导、低泄漏二极管
1N459TR	ONSEMI	类似代替	高电导、低泄漏二极管
1N457ATR	ONSEMI	类似代替	高电导、低泄漏二极管

与1N459ATR相关器件

型号	品牌	获取价格	描述	数据表
1N459ATRLEADFREE	CENTRAL	获取价格	Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon, DO-35,
1N459AX	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon,
1N459B	NJSEMI	获取价格	Diode 200V 0.5A 2-Pin DO-35
1N459C	NJSEMI	获取价格	Diode 200V 0.5A 2-Pin DO-35
1N459D	NJSEMI	获取价格	Diode 200V 0.5A 2-Pin DO-35
1N459R	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon,
1N459T26A	FAIRCHILD	获取价格	暂无描述
1N459T26A	TI	获取价格	0.2A, 200V, SILICON, SIGNAL DIODE, DO-35
1N459T26R	TI	获取价格	0.2A, 200V, SILICON, SIGNAL DIODE, DO-35
1N459T26R	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,

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