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1N4594_16 PDF预览

1N4594_16

更新时间: 2024-11-16 01:16:43
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描述
Silicon Standard Recovery Diode

1N4594_16 数据手册

 浏览型号1N4594_16的Datasheet PDF文件第2页浏览型号1N4594_16的Datasheet PDF文件第3页 
1N4594(R) thru 1N4596(R)  
VRRM = 1000 V - 1400 V  
IF =150 A  
Silicon Standard  
Recovery Diode  
Features  
• High Surge Capability  
• Types from 1000 V to 1400 V VRRM  
DO-8 Package  
• Not ESD Sensitive  
Note:  
1. Standard polarity: Stud is cathode.  
2. Reverse polarity (R): Stud is anode.  
3. Stud is base.  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
1N4596(R)  
Parameter  
Symbol  
1N4594(R)  
1N4595(R)  
Unit  
VRRM  
VDC  
IF  
1400  
1400  
150  
Repetitive peak reverse voltage  
DC blocking voltage  
1000  
1000  
150  
1200  
1200  
150  
V
V
A
TC ≤ 110 °C  
TC = 25 °C, tp = 8.3 ms  
60 Hz Half wave  
Continuous forward current  
Surge non-repetitive forward  
current, Half Sine Wave  
IF,SM  
3000  
3000  
3000  
A
A2sec  
°C  
I2t  
Tj  
37200  
I2t for fusing  
37200  
37200  
-55 to 150  
-55 to 150  
Operating temperature  
Storage temperature  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
Tstg  
°C  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
1N4596(R)  
1.5  
Parameter  
Symbol  
1N4594(R)  
1.5  
1N4595(R)  
Unit  
V
VF  
IR  
IF = 150 A, Tj = 110 °C  
VR = VRRM, Tj = 110 °C  
Diode forward voltage  
Reverse current  
1.5  
4
4.5  
3.5  
mA  
Thermal characteristics  
Thermal resistance, junction -  
case  
RthJC  
0.35  
0.35  
0.35  
°C/W  
1
Feb 2016  
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/  

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