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1N4594R PDF预览

1N4594R

更新时间: 2024-11-16 02:55:19
品牌 Logo 应用领域
GENESIC 软恢复二极管软恢复能力电源
页数 文件大小 规格书
3页 1757K
描述
Silicon Standard Recovery Diode

1N4594R 数据手册

 浏览型号1N4594R的Datasheet PDF文件第2页浏览型号1N4594R的Datasheet PDF文件第3页 
1N4594(R) thru 1N4596(R)  
VRRM = 1000 V - 1400 V  
IF =150 A  
Silicon Standard  
Recovery Diode  
Features  
• High Surge Capability  
• Types from 1000 V to 1400 V VRRM  
DO-8 Package  
• Not ESD Sensitive  
C
A
A
C
Note:  
1. Standard polarity: Stud is cathode.  
2. Reverse polarity (R): Stud is anode.  
3. Stud is base.  
Stud Stud  
(R)  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
1N4596(R)  
Parameter  
Symbol  
1N4594(R)  
1N4595(R)  
Unit  
VRRM  
VDC  
IF  
1400  
1400  
150  
Repetitive peak reverse voltage  
DC blocking voltage  
1000  
1000  
150  
1200  
1200  
150  
V
V
A
TC ≤ 110 °C  
TC = 25 °C, tp = 8.3 ms  
60 Hz Half wave  
Continuous forward current  
Surge non-repetitive forward  
current, Half Sine Wave  
IF,SM  
3000  
3000  
3000  
A
A2sec  
°C  
I2t  
Tj  
37200  
I2t for fusing  
37200  
37200  
-55 to 150  
-55 to 150  
Operating temperature  
Storage temperature  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
Tstg  
°C  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
1N4596(R)  
1.5  
Parameter  
Symbol  
1N4594(R)  
1.5  
1N4595(R)  
Unit  
V
VF  
IR  
IF = 150 A, Tj = 110 °C  
VR = VRRM, Tj = 110 °C  
Diode forward voltage  
Reverse current  
1.5  
4
4.5  
3.5  
mA  
Thermal characteristics  
Thermal resistance, junction -  
case  
RthJC  
0.35  
0.35  
0.35  
°C/W  
1
Oct. 2018  
http://www.diodemodule.com/silicon_products/studs/1n4595r.pdf  

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