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1N4594R PDF预览

1N4594R

更新时间: 2024-01-15 15:13:45
品牌 Logo 应用领域
GENESIC 软恢复二极管软恢复能力电源
页数 文件大小 规格书
3页 1757K
描述
Silicon Standard Recovery Diode

1N4594R 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-8
包装说明:O-MUPM-X1针数:1
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.4应用:SOFT RECOVERY POWER
外壳连接:ANODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJEDEC-95代码:DO-205AA
JESD-30 代码:O-MUPM-X1JESD-609代码:e0
最大非重复峰值正向电流:2500 A元件数量:1
相数:1端子数量:1
最高工作温度:200 °C最低工作温度:-65 °C
最大输出电流:150 A封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1000 V子类别:Rectifier Diodes
表面贴装:NO端子面层:TIN LEAD
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N4594R 数据手册

 浏览型号1N4594R的Datasheet PDF文件第2页浏览型号1N4594R的Datasheet PDF文件第3页 
1N4594(R) thru 1N4596(R)  
VRRM = 1000 V - 1400 V  
IF =150 A  
Silicon Standard  
Recovery Diode  
Features  
• High Surge Capability  
• Types from 1000 V to 1400 V VRRM  
DO-8 Package  
• Not ESD Sensitive  
C
A
A
C
Note:  
1. Standard polarity: Stud is cathode.  
2. Reverse polarity (R): Stud is anode.  
3. Stud is base.  
Stud Stud  
(R)  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
1N4596(R)  
Parameter  
Symbol  
1N4594(R)  
1N4595(R)  
Unit  
VRRM  
VDC  
IF  
1400  
1400  
150  
Repetitive peak reverse voltage  
DC blocking voltage  
1000  
1000  
150  
1200  
1200  
150  
V
V
A
TC ≤ 110 °C  
TC = 25 °C, tp = 8.3 ms  
60 Hz Half wave  
Continuous forward current  
Surge non-repetitive forward  
current, Half Sine Wave  
IF,SM  
3000  
3000  
3000  
A
A2sec  
°C  
I2t  
Tj  
37200  
I2t for fusing  
37200  
37200  
-55 to 150  
-55 to 150  
Operating temperature  
Storage temperature  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
Tstg  
°C  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
1N4596(R)  
1.5  
Parameter  
Symbol  
1N4594(R)  
1.5  
1N4595(R)  
Unit  
V
VF  
IR  
IF = 150 A, Tj = 110 °C  
VR = VRRM, Tj = 110 °C  
Diode forward voltage  
Reverse current  
1.5  
4
4.5  
3.5  
mA  
Thermal characteristics  
Thermal resistance, junction -  
case  
RthJC  
0.35  
0.35  
0.35  
°C/W  
1
Oct. 2018  
http://www.diodemodule.com/silicon_products/studs/1n4595r.pdf  

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