Datasheet > 1N4594_18

1N4594_18

更新时间： 2022-02-26 13:43:53

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描述
Silicon Standard Recovery Diode

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数据手册

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1N4594_18 数据手册

1N4594(R) thru 1N4596(R)

V_RRM= 1000 V - 1400 V

I_F=150 A

Silicon Standard

Recovery Diode

Features

• High Surge Capability

• Types from 1000 V to 1400 V V_RRM

DO-8 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

2. Reverse polarity (R): Stud is anode.

3. Stud is base.

Stud Stud

(R)

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

1N4596(R)

Parameter

Symbol

1N4594(R)

1N4595(R)

Unit

V_RRM

V_DC

I_F

1400

150

Repetitive peak reverse voltage

DC blocking voltage

1000

150

1200

150

T_C≤ 110 °C

T_C= 25 °C, t_p= 8.3 ms

60 Hz Half wave

Continuous forward current

Surge non-repetitive forward

current, Half Sine Wave

I_F,SM

3000

A²sec

°C

I₂t

T_j

37200

I₂t for fusing

37200

-55 to 150

Operating temperature

Storage temperature

-55 to 150

T_stg

°C

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

1N4596(R)

1.5

Parameter

Symbol

1N4594(R)

1.5

1N4595(R)

Unit

V_F

I_R

I_F= 150 A, T_j= 110 °C

V_R= V_RRM, T_j= 110 °C

Diode forward voltage

Reverse current

1.5

4.5

3.5

Thermal characteristics

Thermal resistance, junction -

case

R_thJC

0.35

°C/W

Oct. 2018

http://www.diodemodule.com/silicon_products/studs/1n4595r.pdf

12 3

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与1N4594_18相关器件

型号	品牌	描述	获取价格	数据表
1N4594F	MICROSEMI	暂无描述	获取价格
1N4594R	MICROSEMI	Rectifier Diode, 1 Phase, 1 Element, 150A, 1000V V(RRM), Silicon, DO-205AA, METAL, DO-8, 1	获取价格
1N4594R	GENESIC	Silicon Standard Recovery Diode	获取价格
1N4594RF	MICROSEMI	Rectifier Diode, 1 Element, 150A, 1000V V(RRM),	获取价格
1N4594RTS	MICROSEMI	Rectifier Diode, 1 Element, 150A, 1000V V(RRM),	获取价格
1N4594TS	MICROSEMI	Rectifier Diode, 1 Element, 150A, 1000V V(RRM),	获取价格