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1N4453

更新时间: 2024-11-02 14:52:35
品牌 Logo 应用领域
森美特 - SUNMATE /
页数 文件大小 规格书
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描述
Switching Diodes Switch detector

1N4453 数据手册

  
1N914 - 1N4454  
SMALL SIGNAL SWITCHING DIODES  
DO-35(GLASS)  
Features  
Silicon epitaxial planar diode  
Fast swithching diodes  
!
!
1.0 2(26.0)  
MIN.  
Mechanical Data  
0.079(2.0)  
MAX  
!
!
!
Case: DO-35, glass case  
Polarity: Color band denotes cathode  
Weight: 0.004 ounces, 0.13 grams  
0.165 (4.2)  
MAX  
1.0 2(26.0)  
MIN.  
0.020(0.52)  
TYP  
Dimensions in millimeters  
TA = 25C unless otherwise specified  
Maximum Ratings  
Peak  
Max.  
Aver.  
Max.  
Max.  
Max.  
Forward  
Voltage  
drop  
Max.  
reverse  
Power Junction  
Reverse  
Max. Reverse Recovery Time  
Type  
voltage Rectified Dissip tempera-  
VRM(V) Current At 25 ture  
I(AV)Ma Ptot(mW) TJ  
Current  
VF  
at IF  
IR  
at trr(ns)  
Test conditions  
(V) (mA) (nA) VR(V) Max.  
1N914  
100  
100  
50  
75  
150  
200  
150  
150  
1502)  
150  
150  
150  
150  
150  
150  
500  
500  
500  
400  
400  
500  
500  
500  
400  
400  
400  
400  
200  
200  
200  
175  
175  
200  
200  
200  
175  
175  
175  
175  
1.0  
1.0  
10  
10  
25  
25  
20  
20  
50  
30  
50  
25  
20  
20  
30  
30  
20  
50  
4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
4.0 IF=IR=10 to 200mA, to 0.1 IF  
1N4149  
1N4150  
1N4152  
1N4153  
1N4154  
1N4447  
1N4449  
1N4450  
1N4451  
1N4453  
1N4454  
1.0  
200  
0.10  
0.10  
0.10  
20  
100  
50  
40  
0.55  
0.55  
1.0  
2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA  
4.0 IF=IR=10mA to, IR=1mA  
75  
50  
35  
100  
25  
100  
100  
40  
1.0  
1.0  
30  
25  
0.54  
0.50  
0.55  
1.0  
0.50  
0.10  
0.01  
10  
50  
40  
50  
10 IF=IR=10mA to, IR=1mA  
-
-
30  
50  
75  
100  
4.0  
IF=IR=10mA to, IR=1mA  
Notes:  
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature parameters for diodes  
in case DO-34: Ptot=300mW TSTG=-65 to +175 TJ=175 JA=400K/W  
R
www.sunmate.tw  
1 of 1  

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