1N914 - 1N4454
SMALL SIGNAL SWITCHING DIODES
DO-35(GLASS)
Features
Silicon epitaxial planar diode
Fast swithching diodes
!
!
1.0 2(26.0)
MIN.
Mechanical Data
0.079(2.0)
MAX
!
!
!
Case: DO-35, glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
0.165 (4.2)
MAX
1.0 2(26.0)
MIN.
0.020(0.52)
TYP
Dimensions in millimeters
TA = 25ꢀC unless otherwise specified
Maximum Ratings
Peak
Max.
Aver.
Max.
Max.
Max.
Forward
Voltage
drop
Max.
reverse
Power Junction
Reverse
Max. Reverse Recovery Time
Type
voltage Rectified Dissip tempera-
VRM(V) Current At 25 ture
I(AV)Ma Ptot(mW) TJ
Current
VF
at IF
IR
at trr(ns)
Test conditions
(V) (mA) (nA) VR(V) Max.
1N914
100
100
50
75
150
200
150
150
1502)
150
150
150
150
150
150
500
500
500
400
400
500
500
500
400
400
400
400
200
200
200
175
175
200
200
200
175
175
175
175
1.0
1.0
10
10
25
25
20
20
50
30
50
25
20
20
30
30
20
50
4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
4.0 IF=IR=10 to 200mA, to 0.1 IF
1N4149
1N4150
1N4152
1N4153
1N4154
1N4447
1N4449
1N4450
1N4451
1N4453
1N4454
1.0
200
0.10
0.10
0.10
20
100
50
40
0.55
0.55
1.0
2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA
4.0 IF=IR=10mA to, IR=1mA
75
50
35
100
25
100
100
40
1.0
1.0
30
25
0.54
0.50
0.55
1.0
0.50
0.10
0.01
10
50
40
50
10 IF=IR=10mA to, IR=1mA
-
-
30
50
75
100
4.0
IF=IR=10mA to, IR=1mA
Notes:
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature parameters for diodes
in case DO-34: Ptot=300mW TSTG=-65 to +175 TJ=175 JA=400K/W
R
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