1N4448

更新时间： 2024-01-18 08:45:44

品牌	Logo	应用领域
美台 - DIODES		二极管开关
页数	文件大小	规格书
2页	61K
描述
FAST SWITCHING DIODE

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数据手册

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1N4448 数据手册

1N4148 / 1N4448

FAST SWITCHING DIODE

Features

Fast Switching Speed

General Purpose Rectification

Silicon Epitaxial Planar Construction

Mechanical Data

Case: DO-35

Leads: Solderable per MIL-STD-202,

Method 208

Polarity: Cathode Band

Marking: Type Number

Weight: 0.13 grams (approx.)

DO-35

Dim

Min

25.40

Max

4.00

0.60

2.00

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

1N4148

1N4448

Unit

V_RM

Non-Repetitive Peak Reverse Voltage

100

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_FM

RMS Reverse Voltage

Forward Continuous Current (Note 1)

Average Rectified Output Current (Note 1)

300

500

I_O

150

Non-Repetitive Peak Forward Surge Current @ t = 1.0s

1.0

2.0

I_FSM

P_d

@ t = 1.0ms

Power Dissipation (Note 1)

500

1.68

mW/°C

Derate Above 25°C

R_qJA

Thermal Resistance, Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

300

K/W

T_j, T_STG

-65 to +175

°C

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

Symbol

Min

Max

Unit

Test Condition

I_F= 10mA

I_F= 5.0mA

I_F= 100mA

Maximum Forward Voltage

1N4148

1N4448

0.62

1.0

0.72

1.0

V_FM

V_R= 75V

5.0

V_R= 70V, T_j= 150°C

I_RM

Maximum Peak Reverse Current

_R= 20V, T_j= 150°C

_R= 20V

V_R= 0, f = 1.0MHz

C_j

t_rr

Capacitance

4.0

I_F= 10mA to I_R=1.0mA

V_R= 6.0V, R_L= 100W

Reverse Recovery Time

Notes: 1. Valid provided that device terminals are kept at ambient temperature.

DS12019 Rev. B-2

1 of 2

1N4148 / 1N4448

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