Datasheet > 1N4153

1N4153

更新时间： 2024-11-11 22:52:07

品牌	Logo	应用领域
商朗 - LUNSURE		小信号开关二极管
页数	文件大小	规格书
1页	51K
描述
SMALL SIGNAL SWITCHING DIODE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N4153 数据手册

1N914 THRU 1N4454

SMALL SIGNAL SWITCHING DIODE

CHENYI ELECTRONICS

FEATURES

. Silicon epitaxial planar diode

. Fast swithching diodes

. 1N4149, 1N4447, 1N4449 are also

avaible in glass case DO-34

MECHANICAL DATA

. Case: DO-35 glass case

. Polarity: Color brand denotes cathode end

. Weight: Approx. 0.13gram

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Peak

Max.

Aver.

Max.

Forward

Voltage

drop

Max.

reverse

Power Junction

Reverse

Current

Max. Reverse Recovery Time

Type

voltage Rectified Dissip tempera-

VRM(V) Current At 25 ture

I(AV)Ma Ptot(mW) TJ

at IF

at trr(ns)

Test conditions

(V) (mA) (nA) VR(V) Max.

1N914

1N41491)

1N4150

1N4152

1N4153

1N4154

1N44471)

1N44491)

1N4450

1N4451

1N4453

1N4454

100

150

200

150

1502)

150

500

400

500

400

200

175

200

175

1.0

4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA

4.0 IF=IR=10 to 200mA, to 0.1 IF

1.0

200

0.10

100

0.55

1.0

2.0 IF=10mA, VR=6V, RL=100 , to IR=1mA

4.0 IF=10mA, VR=6V, RL=100 , to IR=1mA

4.0 IF=IR=10mA to, IR=1mA

100

1.0

0.54

0.50

0.55

1.0

0.50

0.10

0.01

10 IF=IR=10mA to, IR=1mA

100

4.0

IF=IR=10mA to, IR=1mA

Notes: 1.These diodes are also available in glass case DO-34

2.Valid provided that leads at a distance of 8mm from case are kept at ambient temperature parameters for diodes

in case DO-34: Ptot=300mW TSTG=-65 to +175 TJ=175 JA=400K/W

Page 1 of 1

中文翻译

下载PDF

与1N4153相关器件

型号	品牌	获取价格	描述	数据表
1N4153.TR	TI	获取价格	75V, SILICON, SIGNAL DIODE, DO-35
1N4153_1	MICROSEMI	获取价格	SWITCHING DIODES
1N4153-1	CDI-DIODE	获取价格	SWITCHING DIODES
1N4153-1	NJSEMI	获取价格	Diode Switching 75V 0.15A 2-Pin DO-35
1N4153-1	MICROSEMI	获取价格	Silicon Switching Diode DO-35 Glass Package
1N4153113	NXP	获取价格	DIODE 0.2 A, 75 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
1N4153116	NXP	获取价格	DIODE 0.2 A, 75 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
1N4153143	NXP	获取价格	DIODE 0.2 A, 75 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
1N4153153	NXP	获取价格	DIODE 0.2 A, 75 V, SILICON, SIGNAL DIODE, DO-35, Signal Diode
1N4153-1E3	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.15A, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2