1N4007G

更新时间： 2024-11-11 22:37:55

品牌	Logo	应用领域
EIC		二极管 PC
页数	文件大小	规格书
2页	20K
描述
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

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数据手册

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1N4007G 数据手册

GLASS PASSIVATED JUNCTION

SILICON RECTIFIERS

1N4001G - 1N4007G

BY133G

DO - 41

PRV : 50 - 1000 Volts

Io : 1.0 Ampere

FEATURES :

1.00 (25.4)

0.107 (2.7)

MIN.

* Glass passivated chip

* High current capability

* High reliability

* Low reverse current

* Low forward voltage drop

0.080 (2.0)

0.205 (5.2)

0.166 (4.2)

1.00 (25.4)

MECHANICAL DATA :

0.034 (0.86)

MIN.

* Case : DO-41 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

0.028 (0.71)

* Polarity : Color band denotes cathode end

* Mounting position : Any

Dimensions in inches and ( millimeters )

* Weight : 0.339 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL

UNIT

4001G 4002G 4003G 4004G 4005G 4006G 4007G 133G

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000 1300 Volts

700 910 Volts

Maximum DC Blocking Voltage

100

1000 1300 Volts

Maximum Average Forward Current

0.375"(9.5mm) Lead Length Ta = 75 °C

Peak Forward Surge Current

IF(AV)

1.0

Amp.

8.3ms Single half sine wave Superimposed

on rated load (JEDEC Method)

IFSM

1.0

5.0

Amps.

Volts

Maximum Forward Voltage at IF = 1.0 Amp.

Maximum DC Reverse Current Ta = 25 °C

at rated DC Blocking Voltage

Ta = 100 °C

IR(H)

Typical Junction Capacitance (Note1)

Typical Thermal Resistance (Note2)

Junction Temperature Range

RqJA

°C/W

°C

- 65 to + 175

Storage Temperature Range

TSTG

°C

Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC

(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.

UPDATE : MAY 27, 1998

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