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1N4007GP PDF预览

1N4007GP

更新时间: 2024-11-13 22:37:55
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 81K
描述
1 Amp Glass PassivatedRectifier 50 - 1000 Volts

1N4007GP 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:DO-41包装说明:PLASTIC PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.06其他特性:METALLURGICALLY BONDED
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-41JESD-30 代码:O-PALF-W2
JESD-609代码:e0元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1000 V
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N4007GP 数据手册

 浏览型号1N4007GP的Datasheet PDF文件第2页浏览型号1N4007GP的Datasheet PDF文件第3页 
M C C  
1N4001GP  
THRU  
1N4007GP  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
·
·
·
·
Glass Passivated Junction  
Low Current Leakage  
1 Amp Glass  
PassivatedRectifier  
50 - 1000 Volts  
Metalurgically Bonded Construction  
Low Cost  
Maximum Ratings  
DO-41  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 20°C/W Junction To Lead  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
D
1N4001GP  
1N4002GP  
1N4003GP  
1N4004GP  
1N4005GP  
1N4006GP  
1N4007GP  
---  
---  
---  
---  
---  
---  
---  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
A
Cathode  
Mark  
140V  
280V  
420V  
560V  
700V  
B
D
C
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
1.0A  
TA = 75°C  
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
DIMENSIONS  
Maximum  
INCHES  
MIN  
.166  
.080  
.028  
MM  
MIN  
4.10  
2.00  
.70  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.1V  
IFM = 1.0A;  
TJ = 25°C*  
DIM  
A
B
C
D
MAX  
.205  
.107  
.034  
---  
MAX  
5.20  
2.70  
.90  
NOTE  
1.000  
25.40  
---  
5.0mA  
50mA  
TJ = 25°C  
TJ = 125°C  
Typical Junction  
Capacitance  
CJ  
15pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 2%  
www.mccsemi.com  

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