1N4001GP thru 1N4007GP
Vishay General Semiconductor
Glass Passivated Junction Rectifier
Major Ratings and Characteristics
®
IF(AV)
VRRM
IFSM
IR
1.0 A
50 V to 1000 V
30 A
5.0 µA
*
VF
1.1 V
d
e
t
n
e
Tj max.
175 °C
t
a
P
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602,
DO-204AL (DO-41)
brazed-lead assembly
by Patent No. 3,930,306
Features
Mechanical Data
• Superectifier structure for High Reliability
application
Case: DO-204AL, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
• Cavity-free glass-passivated junction
• Low forward voltage drop
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
• Low leakage current, typical I less than 0.1 µA
• High forward surge capability
R
• Meets environmental standard MIL-S-19500
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
for both consumer and automotive applications
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP Unit
Maximum repetitive peak
reverse voltage
VRRM
50
100
200
400
600
800
1000
V
* Maximum RMS voltage
VRMS
VDC
35
50
70
140
200
280
400
420
600
560
800
700
V
V
* Maximum DC blocking
voltage
100
1000
* Maximum average forward
rectified current 0.375"
(9.5 mm) lead length
at TA = 75 °C
IF(AV)
1.0
A
* Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
30
A
* Maximum full load reverse
current, full cycle average
0.375" (9.5 mm) lead length
TA = 75 °C
IR(AV)
µA
* Operating junction and
TJ, TSTG
- 65 to + 175
°C
storage temperature range
Document Number 88504
14-Sep-05
www.vishay.com
1