Datasheet > 1N4006G

1N4006G

更新时间： 2024-10-27 22:37:55

品牌	Logo	应用领域
美丽微 - FORMOSA		整流二极管
页数	文件大小	规格书
2页	36K
描述
1.0 AMP GLASS PASSIVATED RECTIFIERS

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中文翻译

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数据手册

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1N4006G 数据手册

1N4001G THRU 1N4007G

1.0 AMP GLASS PASSIVATED RECTIFIERS

VOLTAGE RANGE

50 to 1000 Volts

CURRENT

1.0 Ampere

FEATURES

* Low forward voltage drop

* High current capability

* High reliability

DO-41

.107(2.7)

.080(2.0)

DIA.

* High surge current capability

* Glass passivated junction

1.0(25.4)

MIN.

MECHANICAL DATA

* Case: Molded plastic

.205(5.2)

.166(4.2)

* Epoxy: UL 94V-0 rate flame retardant

* Lead: Axial leads, solderable per MIL-STD-202,

method 208 guranteed

* Polarity: Color band denotes cathode end

* Mounting position: Any

1.0(25.4)

MIN.

.034(.9)

Weight: 0.34 grams

.028(.7)

DIA.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

1N4001G 1N4002G 1N4003G1N4004G 1N4005G 1N4006G 1N4007G UNITS

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Rectified Current

.375"(9.5mm) Lead Length at Ta=75 C

1.0

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Instantaneous Forward Voltage at 1.0A

Maximum DC Reverse Current

1.1

5.0

Ta=25 C

at Rated DC Blocking Voltage

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance RqJA (Note 2)

Ta=100 C

C/W

Operating and Storage Temperature Range TJ, TSTG

-65 +175

NOTES:

1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.

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1N4006GH02-2	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,
1N4006GH02-3	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,
1N4006GH02-5	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,
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1N4006GH03-2	RECTRON	获取价格	Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-41,