生命周期: | Obsolete | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.70 |
风险等级: | 5.84 | 配置: | SINGLE |
二极管类型: | RECTIFIER DIODE | 最大正向电压 (VF): | 5 V |
最大非重复峰值正向电流: | 14 A | 元件数量: | 1 |
最高工作温度: | 175 °C | 最大输出电流: | 0.25 A |
最大重复峰值反向电压: | 3000 V | 子类别: | Rectifier Diodes |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N3647SM | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Element, 0.25A, 3000V V(RRM), |
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1N3649 | MICROSEMI |
获取价格 |
MILITARY SILICON POWER RECTIFIER |
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1N3649E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 3.3A, 800V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 |
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1N3649R | MICROSEMI |
获取价格 |
MILITARY SILICON POWER RECTIFIER |
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1N3649RE3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 3.3A, 800V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 |
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1N364A | NJSEMI |
获取价格 |
Diode Switching 2KV 0.6A 2-Pin Case G-12 |
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1N365 | NJSEMI |
获取价格 |
Diode Switching 50V 0.2A 2-Pin DO-35 Tape and Box |
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1N3650 | MICROSEMI |
获取价格 |
MILITARY SILICON POWER RECTIFIER |
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1N3650E3 | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 3.3A, 1000V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 |
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1N3650R | MICROSEMI |
获取价格 |
MILITARY SILICON POWER RECTIFIER |
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