5秒后页面跳转
1N3611GPHE3/54 PDF预览

1N3611GPHE3/54

更新时间: 2024-01-17 21:23:46
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 67K
描述
STD RECOVERY RECTFR 200V 1A 2PIN DO-41 - Tape and Reel

1N3611GPHE3/54 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:DO-41包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.23其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:DO-204AL
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:30 A元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified参考标准:AEC-Q101
最大重复峰值反向电压:200 V最大反向恢复时间:2 µs
子类别:Rectifier Diodes表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N3611GPHE3/54 数据手册

 浏览型号1N3611GPHE3/54的Datasheet PDF文件第2页浏览型号1N3611GPHE3/54的Datasheet PDF文件第3页浏览型号1N3611GPHE3/54的Datasheet PDF文件第4页 
1N3611GP, 1N3612GP, 1N3613GP, 1N3614GP, 1N3957GP  
www.vishay.com  
Vishay General Semiconductor  
Glass Passivated Junction Plastic Rectifier  
FEATURES  
• Superectifier structure for high reliability  
application  
SUPERECTIFIER®  
• Cavity-free glass-passivated junction  
• Low forward voltage drop  
• Low leakage current, IR less than 0.1 μA  
• High forward surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
DO-204AL (DO-41)  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters, and freewheeling diodes application  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
VRRM  
IFSM  
200 V, 400 V, 600 V, 800 V, 1000 V  
MECHANICAL DATA  
Case: DO-204AL, molded epoxy over glass body  
30 A  
1.0 μA  
IR  
Molding compound meets UL 94 V-0 flammability rating  
VF  
1.0 V  
Base P/N-E3  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
-
RoHS-compliant, commercial grade  
TJ max.  
Package  
Diode variation  
175 °C  
DO-204AL (DO-41)  
Single die  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) (1)  
PARAMETER  
SYMBOL 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3957GP UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
A
Maximum DC blocking voltage  
1000  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 75 °C  
IF(AV)  
1.0  
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
30  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
°C  
Note  
(1)  
JEDEC® registered values  
Revision: 11-Dec-13  
Document Number: 88502  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与1N3611GPHE3/54相关器件

型号 品牌 描述 获取价格 数据表
1N3611GP-HE3/54 VISHAY DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN,

获取价格

1N3611JANTX MICROSEMI VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS

获取价格

1N3611R MICROSEMI Rectifier Diode, 1 Element, 1A, Silicon, GLASS PACKAGE-2

获取价格

1N3611S SENSITRON Rectifier Diode, 1 Element, Silicon

获取价格

1N3611TR CENTRAL Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon,

获取价格

1N3611X MICROSEMI Rectifier Diode, 1 Element, 1A, Silicon, GLASS PACKAGE-2

获取价格