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1N3156ATR PDF预览

1N3156ATR

更新时间： 2023-02-15 00:00:00
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
3页 130K
描述
Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN

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1N3156ATR 数据手册

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1N3154 thru 1N3157, A, -1, e3  
8.4 Volt Temperature Compensated Zener  
Reference Diodes  
S C O T T S D A L E D I V I S I O N  
*ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified  
VOLTAGE  
MAXIMUM  
REVERSE  
CURRENT  
IR @ 5.5 V  
MAXIMUM  
ZENER  
IMPEDANCE  
(Note 2)  
ZZT  
TEMPERATURE  
STABILITY  
(Note 3 & 4)  
ΔVZT  
EFFECTIVE  
TEMPERATURE  
COEFFICIENT  
αVZ  
ZENER  
VOLTAGE  
VZ @ IZT  
ZENER  
TEST  
CURRENT  
IZT  
JEDEC  
TYPE  
NUMBERS  
(Notes 1, 5  
& 6)  
TEMPERATURE  
RANGE  
(Note 1)  
MAXIMUM  
VOLTS  
mA  
OHMS  
mV  
oC  
%/oC  
μA  
10  
10  
10  
10  
10  
10  
10  
10  
1N3154  
1N3154A  
1N3155  
1N3155A  
1N3156  
1N3156A  
1N3157  
1N3157A  
8.00-8.80  
8.00-8.80  
8.00-8.80  
8.00-8.80  
8.00-8.80  
8.00-8.80  
8.00-8.80  
8.00-8.80  
10  
10  
10  
10  
10  
10  
10  
10  
15  
15  
15  
15  
15  
15  
15  
15  
130  
172  
65  
86  
26  
34  
13  
17  
-55 to +100  
-55 to +150  
-55 to +100  
-55 to +150  
-55 to +100  
-55 to +150  
-55 to +100  
-55 to +150  
0.01  
0.01  
0.005  
0.005  
0.002  
0.002  
0.001  
0.001  
*JEDEC Registered Data.  
NOTES:  
1. When ordering devices with tighter tolerance than specified, add a hyphenated suffix to the part number for desired tolerance,  
e.g. 1N3156-2%, 1N3157A-1%, 1N3157-1-1%, etc.  
2. Measured by superimposing 1.0 mA ac rms on 10 mA dc @ 25oC.  
3. The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the  
specified mV change at any discrete temperature between the established limits.  
4. Voltage measurements to be performed 15 seconds after application of dc current.  
5. The 1N3154, 1N3155, 1N3156, and 1N3157 also have military qualification to MIL-PRF-19500/158 up to the JANTXV level by  
adding JAN, JANTX, or JANTXV prefix to part numbers as well as “-1” suffix, e.g. JANTX1N3156-1, JANTXV1N3157-1, etc.  
6. Designate Radiation Hardened devices with “RH” prefix instead of “IN”, i.e. RH3157A instead of 1N3157A.  
GRAPHS  
The curve shown in Figure 1 is typical of the diode series and  
greatly simplifies the estimation of the Temperature Coefficient  
(TC) when the diode is operated at currents other than 10mA.  
EXAMPLE: A diode in this series is operated at a current of  
10mA and has specified Temperature Coefficient (TC) limits of  
+/-0.005%/oC. To obtain the typical Temperature Coefficient  
limits for this same diode operated at a current of 7.5mA, the  
new TC limits (%/oC) can be estimated using the graph in  
FIGURE 1.  
At a test current of 7.5mA the change in Temperature Coefficient  
(TC) is approximately –0.0012%.oC. The algebraic sum of +/-  
0.005%oC and –0.0012%/oC gives the new estimated limits of  
+0.0038%/oC and -0.0062%/oC.  
IZ – Operating Current (mA)  
FIGURE 1  
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT  
WITH CHANGE IN OPERATING CURRENT.  
Copyright © 2005  
7-18-2005 REV B  
Microsemi  
Scottsdale Division  
Page 2  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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