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1N1205BR-PBF PDF预览

1N1205BR-PBF

更新时间: 2024-11-10 06:54:51
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Rectifier Diode

1N1205BR-PBF 数据手册

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1N1199(A,B)-1N1206(A,B)  
SILICON POWER RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS  
Parameter  
Symbol  
1N1199  
1N1200  
1N1201  
1N1202  
1N1203  
1N1204  
1N1205  
1N1206  
Peak reverse voltage  
VR  
50V  
100V  
150V  
200V  
300V  
400V  
500V  
600V  
Operating & storage  
temperature range  
TJ, Tstg  
RθJC  
-65 to +200°C  
Maximum thermal resistance  
Mounting torque  
2.5°C/W junction to case  
25-30 inch pounds  
Weight  
.16 ounces (5.0 grams) typical  
Add “R” to part numbers for reverse polarity.  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
IF(AV)  
IFSM  
Value  
12 Amps  
250 Amps  
260 A2s  
1.2 Volts  
10 µA  
Test Condition  
Average forward current  
TC = 170°C, half-sine wave, RθJC = 2.5°C/W  
8.3ms, half-sine, TJ = 200°C  
Maximum surge current  
Maximum I2t for fusing  
I2t  
Maximum peak forward voltage  
Maximum peak reverse current  
Maximum peak reverse current  
Maximum recommended operating frequency  
VFM  
IRM  
IFM = 30A: TJ = 25°C*  
VRRM, TJ = 25°C  
IRM  
1.0 mA  
VRRM, TJ = 150°C*  
10 kHz  
Pulse test: pulse width 300µsec. Duty cycle 2%  
Rev. 20150317  

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