Datasheet > 1MBI1500UE-330

1MBI1500UE-330

更新时间： 2024-03-03 10:10:37

品牌	Logo	应用领域
富士电机 - FUJI		/
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8页	390K
描述
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数据手册

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1MBI1500UE-330 数据手册

1MBI1500UE-330

IGBT Modules

http://www.fujielectric.com/products/semiconductor/

Characteristics (Representative)

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 25℃ / chip

Tj= 150°C / chip

3000

V^GE=20V

15V

2500

2000

1500

1000

500

2500

2000

1500

1000

500

12V

10V

12V

10V

Collector-Emitter voltage : VCE [V]

Collector current vs. Collector-Emitter voltage (typ.)

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

V^GE=15V / chip

Tj=25°C / chip

3000

2500

2000

1500

1000

500

Tj=125℃

Tj=25℃

Tj=150℃

Ic=3000A

Ic=1500A

Ic= 750A

Gate - Emitter voltage : VGE [ V ]

Collector-Emitter voltage : VCE [V]

Dynamic Gate charge (typ.)

Capacitance vs. Collector-Emitter voltage (typ.)

Vcc=1800V, Tj= 25°C

V^GE=0V, f= 1MHz, Tj= 25°C

1000.0

100.0

10.0

2000

1500

1000

500

VCE

Cies

V^GE

Cres

Coes

-5

-10

-15

1.0

-10

-5

Gate charge : Qg [ μC ]

Collector-Emitter voltage : VCE [V]

1 234 5 6 7 8

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