Datasheet > 1F20

1F20

更新时间： 2024-09-13 12:50:47

品牌	Logo	应用领域
鲁光 - LGE		闪存
页数	文件大小	规格书
2页	197K
描述
Photo Flash Rectifiers

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中文翻译

获取价格

技术参数
数据手册

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1F20 技术参数

Case Style：	R-1	IVA(A)：	0.5
VRRM (V)：	2000	IFSM (A)：	25
VF (V)：	1.8	@IVA(A)：	0.5
Maximum reverse current：	5.0	TRR(nS)：	300
class：	Diodes

1F20 数据手册

1F10-1F20

Photo Flash Rectifiers

VOLTAGE RANGE: 1000 --- 2000 V

CURRENT: 0.5 A

Features

R - 1

Fast switching

Diffused junction

Low leakage

Low forward voltage drop

High current capability

Easilycleaned with alcohol,Isopropanol and

similar solvents

Mechanical Data

Case: JEDEC R--1,molded plastic

Polarity: Color band denotes cathode

Weight: 0.007ounces, 0.20 grams

Mounting position: Any

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60Hz,resistive or inductive load. For capacitive load,derate by20%.

1F10 1F12 1F14 1F15 1F16 1F18 1F20 UNITS

Maximumrecurrent peak reverse voltage

Maximum RMS voltage

1000 1200 1400 1500 1600 1800 2000

700 840 980 1050 1120 1260 1400

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

1000 1200 1400 1500 1600 1800 2000

Maximumaverage forw ard rectified current

0.5

I_F(AV)

9.5mmlead length,

@T_A=75

Peak forward surge current

8.3ms single half-sine-w ave

I_FSM

25.0

1.8

superimposed on rated load T =125

Maximuminstantaneous forw ard voltage

@ 0.5 A

V_F

I_R

Maximumreverse current

@T_A=25

5.0

100.0

μA

at rated DC blocking voltage @T_A=100

Maximum r everse recovery time (NOTE1)

300

t_rr

C_J

Typical junction capacitance

(NOTE2)

Operating junction temperature range

Storage temperature range

-55 ---- + 150

T_J

T_STG

NOTE: 1. Reverse recovery test conditions:I_F=0.5A,I_R=-1.0A,I_RR=-0.25A.

2. Mersured at 1MH_Zand applied reverse voltage of 4.0V.

http://www.luguang.cn

mail:lge@luguang.cn

中文翻译

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