Datasheet > 1F10

1F10

更新时间： 2024-09-21 02:54:23

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
2页	72K
描述
PHOTO FLASH RECTIFIER

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中文翻译

获取价格

数据手册

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1F10 数据手册

GALAXY ELECTRICAL

1F10 --- 1F18

VOLTAGE RANGE: 1000 --- 1800 V

CURRENT: 0.5 A

PHOTO FLASH RECTIFIER

FEATURES

Fast switching

R - 1

Diffused junction

Low leakage

Low forward voltage drop

High current capability

Easilycleaned with alcohol,Isopropanol and

similar solvents

MECHANICAL DATA

Case: JEDEC R--1,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.007ounces, 0.20 grams

Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60Hz,resistive or inductive load. For capacitive load,derate by20%.

1F10 1F12 1F14 1F15 1F16 1F18 UNITS

Maximumrecurrent peak reverse voltage

Maximum RMS voltage

1000

700

1200

840

1400 1500 1600

980 1050 1120

1800

1260

1800

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

1000

1200

1400 1500 1600

Maximumaverage forw ard rectified current

0.5

I_F(AV)

9.5mmlead length,

@T_A=75

Peak forward surge current

8.3ms single half-sine-w ave

I_FSM

25.0

1.8

superimposed on rated load T =125

Maximuminstantaneous forw ard voltage

@ 0.5 A

V_F

I_R

Maximumreverse current

@T_A=25

5.0

100.0

μA

at rated DC blocking voltage @T_A=100

Maximum r everse recovery time (NOTE1)

300

t_rr

C_J

Typical junction capacitance

(NOTE2)

Operating junction temperature range

Storage temperature range

-55 ---- + 150

T_J

T_STG

NOTE: 1. Reverse recovery test conditions:I_F=0.5A,I_R=-1.0A,I_RR=-0.25A.

www.galaxycn.com

2. Mersured at 1MH_Zand applied reverse voltage of 4.0V.

BLGALAXY ELECTRICAL

Document Number 0282001

中文翻译

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