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1N459A PDF预览

1N459A

更新时间: 2024-02-14 22:50:34
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
3页 185K
描述
高电导、低泄漏二极管

1N459A 数据手册

 浏览型号1N459A的Datasheet PDF文件第1页浏览型号1N459A的Datasheet PDF文件第3页 
1N459/A  
Small Signal Diode  
DO-35  
Color Band Denotes Cathode  
Absolute Maximum Ratings *  
T
= 25°C unless otherwise noted  
a
Symbol  
Parameter  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
Value  
200  
Unit  
V
V
RRM  
F(AV)  
FSM  
I
I
500  
mA  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
1.0  
4.0  
A
A
Pulse Width = 1.0 microsecond  
T
T
Storage Temperature Range  
-65 to +200  
175  
°C  
°C  
STG  
J
Operating Junction Temperature  
* These ratings are limiting values above which the serviceability of the diode may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 200 degrees C.  
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
500  
Unit  
mW  
P
Power Dissipation  
Thermal Resistance, Junction to Ambient  
D
R
300  
°C/W  
θJA  
Electrical Characteristics  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Conditions  
Min.  
Max  
Units  
V
V
Breakdown Voltage  
I
= 100µA  
200  
V
R
F
R
Forward Voltage  
1N459A  
I
I
= 3mA  
= 100mA  
1.0  
1.0  
V
V
F
F
I
Reverse Leakage  
1N459  
V
= 175V  
R
25  
5
nA  
µA  
R
1N459A V = 175V, T = 150°C  
R
A
C
Total Capacitance  
1N459A V = 0, f = 1.0MHz  
6.0  
pF  
T
R
Publication Order Number:  
1N459/A /D  
©2004 Semiconductor Components Industries, LLC.  
October-2017,Rev.1  

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