Datasheet > 15ETH06FP-N3

15ETH06FP-N3

更新时间： 2022-06-05 01:04:45

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	195K
描述
Ultrafast Rectifier, 15 A Fred PtÂ®

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15ETH06FP-N3 数据手册

VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3

www.vishay.com

Vishay Semiconductors

Ultrafast Rectifier, 15 A Fred Pt^®

FEATURES

• Hyperfast recovery time

• Low forward voltage drop

• 175 °C operating junction temperature

• Low leakage current

TO-220AC

TO-220 FULL-PAK

• Single die center tap module

• Fully isolated package (V_INS= 2500 V_RMS

• UL E78996 pending

Base

cathode

)

• Compliant to RoHS Directive 2002/95/EC

• Designed and qualified according to JEDEC-JESD47

Cathode

Anode

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

Cathode

Anode

VS-15ETH06PbF

VS-15ETH06-N3

VS-15ETH06FPPbF

VS-15ETH06FP-N3

DESCRIPTION/APPLICATIONS

State of the art hyperfast recovery rectifiers designed with

optimized performance of forward voltage drop, hyperfast

recovery time, and soft recovery.

PRODUCT SUMMARY

Package

TO-220AC, TO-220FP

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness and

reliability characteristics.

These devices are intended for use in PFC boost stage in the

AC/DC section of SMPS, inverters or as freewheeling

diodes.

I_F(AV)

15 A

600 V

V_R

V_Fat I_F

2.2 V

_rrtyp.

22 ns

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

T_Jmax.

175 °C

Single die

Diode variation

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

V_RRM

600

T_C= 140 °C

Average rectified forward current

Non-repetitive peak surge current

I_F(AV)

T_C= 80 °C (FULL-PAK)

T_J= 25 °C

120

180

I_FSM

T_J= 25 °C (FULL-PAK)

Peak repetitive forward current

I_FM

Operating junction and storage temperatures

T_J, T_Stg

- 65 to 175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX. UNITS

Breakdown voltage, blocking voltage

V_BR, V_R

I_R= 100 μA

I_F= 15 A

600

1.8

1.3

0.2

2.2

1.6

500

Forward voltage

V_F

I_F= 15 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

I_R

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

Junction capacitance

Series inductance

C_T

L_S

Measured lead to lead 5 mm from package body

8.0

Revision: 02-Jan-12

Document Number: 94002

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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