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15ETH06FP-N3 PDF预览

15ETH06FP-N3

更新时间: 2024-11-01 12:54:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 195K
描述
Ultrafast Rectifier, 15 A Fred Pt®

15ETH06FP-N3 数据手册

 浏览型号15ETH06FP-N3的Datasheet PDF文件第2页浏览型号15ETH06FP-N3的Datasheet PDF文件第3页浏览型号15ETH06FP-N3的Datasheet PDF文件第4页浏览型号15ETH06FP-N3的Datasheet PDF文件第5页浏览型号15ETH06FP-N3的Datasheet PDF文件第6页浏览型号15ETH06FP-N3的Datasheet PDF文件第7页 
VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3  
www.vishay.com  
Vishay Semiconductors  
Ultrafast Rectifier, 15 A Fred Pt®  
FEATURES  
• Hyperfast recovery time  
• Low forward voltage drop  
• 175 °C operating junction temperature  
• Low leakage current  
TO-220AC  
TO-220 FULL-PAK  
• Single die center tap module  
• Fully isolated package (VINS = 2500 VRMS  
• UL E78996 pending  
Base  
cathode  
2
)
• Compliant to RoHS Directive 2002/95/EC  
• Designed and qualified according to JEDEC-JESD47  
1
Cathode  
3
Anode  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
1
3
Cathode  
Anode  
VS-15ETH06PbF  
VS-15ETH06-N3  
VS-15ETH06FPPbF  
VS-15ETH06FP-N3  
DESCRIPTION/APPLICATIONS  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
PRODUCT SUMMARY  
Package  
TO-220AC, TO-220FP  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
These devices are intended for use in PFC boost stage in the  
AC/DC section of SMPS, inverters or as freewheeling  
diodes.  
IF(AV)  
15 A  
600 V  
VR  
VF at IF  
2.2 V  
t
rr typ.  
22 ns  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
TJ max.  
175 °C  
Single die  
Diode variation  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
VRRM  
600  
V
TC = 140 °C  
Average rectified forward current  
Non-repetitive peak surge current  
IF(AV)  
15  
TC = 80 °C (FULL-PAK)  
TJ = 25 °C  
120  
180  
A
IFSM  
TJ = 25 °C (FULL-PAK)  
Peak repetitive forward current  
IFM  
30  
Operating junction and storage temperatures  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
-
MAX. UNITS  
Breakdown voltage, blocking voltage  
VBR, VR  
IR = 100 μA  
IF = 15 A  
600  
-
-
-
-
-
-
-
1.8  
1.3  
0.2  
30  
2.2  
1.6  
50  
500  
-
V
Forward voltage  
VF  
IF = 15 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
IR  
μA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
20  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
Revision: 02-Jan-12  
Document Number: 94002  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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