VS-15ETH06PbF, VS-15ETH06-N3, VS-15ETH06FPPbF, VS-15ETH06FP-N3
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Vishay Semiconductors
Ultrafast Rectifier, 15 A Fred Pt®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
TO-220AC
TO-220 FULL-PAK
• Single die center tap module
• Fully isolated package (VINS = 2500 VRMS
• UL E78996 pending
Base
cathode
2
)
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
1
Cathode
3
Anode
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
1
3
Cathode
Anode
VS-15ETH06PbF
VS-15ETH06-N3
VS-15ETH06FPPbF
VS-15ETH06FP-N3
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
PRODUCT SUMMARY
Package
TO-220AC, TO-220FP
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
IF(AV)
15 A
600 V
VR
VF at IF
2.2 V
t
rr typ.
22 ns
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
TJ max.
175 °C
Single die
Diode variation
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
VRRM
600
V
TC = 140 °C
Average rectified forward current
Non-repetitive peak surge current
IF(AV)
15
TC = 80 °C (FULL-PAK)
TJ = 25 °C
120
180
A
IFSM
TJ = 25 °C (FULL-PAK)
Peak repetitive forward current
IFM
30
Operating junction and storage temperatures
TJ, TStg
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
-
MAX. UNITS
Breakdown voltage, blocking voltage
VBR, VR
IR = 100 μA
IF = 15 A
600
-
-
-
-
-
-
-
1.8
1.3
0.2
30
2.2
1.6
50
500
-
V
Forward voltage
VF
IF = 15 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
IR
μA
TJ = 150 °C, VR = VR rated
VR = 600 V
Junction capacitance
Series inductance
CT
LS
20
pF
nH
Measured lead to lead 5 mm from package body
8.0
-
Revision: 02-Jan-12
Document Number: 94002
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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