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15ETH06STRRPBF PDF预览

15ETH06STRRPBF

更新时间: 2024-11-01 06:16:27
品牌 Logo 应用领域
威世 - VISHAY 整流二极管快速恢复能力电源快速恢复二极管
页数 文件大小 规格书
7页 122K
描述
Hyperfast Rectifier, 15 A FRED PtTM

15ETH06STRRPBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.48其他特性:FREEWHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE
应用:HYPERFAST RECOVERY POWER RECTIFIER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.6 V
JESD-30 代码:R-PSSO-G2最大非重复峰值正向电流:120 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

15ETH06STRRPBF 数据手册

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15ETH06SPbF/15ETH06-1PbF  
Vishay High Power Products  
Hyperfast Rectifier,  
15 A FRED PtTM  
FEATURES  
15ETH06SPbF  
15ETH06-1PbF  
• Hyperfast recovery time  
Available  
• Low forward voltage drop  
RoHS*  
COMPLIANT  
• Low leakage current  
Base  
cathode  
• 175 °C operating junction temperature  
• Single die center tap module  
• Lead (Pb)-free (“PbF” suffix)  
• Designed and qualified for Q101 level  
2
2
3
1
3
1
DESCRIPTION/APPLICATIONS  
N/C  
Anode  
N/C  
Anode  
D2PAK  
State of the art hyperfast recovery rectifiers designed with  
optimized performance of forward voltage drop, hyperfast  
recovery time, and soft recovery.  
TO-262  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
PRODUCT SUMMARY  
These devices are intended for use in PFC boost stage in  
the AC-DC section of SMPS, inverters or as freewheeling  
diodes.  
trr (typical)  
22 ns  
IF(AV)  
15 A  
VR  
600 V  
The extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Peak repetitive forward current  
Operating junction and storage temperatures  
V
TC = 140 °C  
TJ = 25 °C  
15  
IFSM  
120  
A
IFM  
30  
TJ, TStg  
- 65 to 175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 µA  
IF = 15 A  
600  
-
-
V
-
-
-
-
-
-
1.8  
1.3  
0.2  
30  
2.2  
1.6  
50  
500  
-
Forward voltage  
VF  
IR  
IF = 15 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
µA  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
Junction capacitance  
Series inductance  
CT  
LS  
20  
pF  
nH  
Measured lead to lead 5 mm from package body  
8.0  
-
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94003  
Revision: 21-May-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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