Datasheet > 14KESD12TR

14KESD12TR

更新时间： 2024-09-18 20:44:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	183K
描述
Trans Voltage Suppressor Diode, 4000W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, HERMETIC SEALED, GLASS, DO-41, 2 PIN

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14KESD12TR 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	DO-41	包装说明：	HERMETIC SEALED, GLASS, DO-41, 2 PIN
针数：	2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.87	最小击穿电压：	13.3 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-204AL	JESD-30 代码：	O-LALF-W2
JESD-609代码：	e0	最大非重复峰值反向功率耗散：	4000 W
元件数量：	1	端子数量：	2
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	1.5 W
认证状态：	Not Qualified	最大重复峰值反向电压：	12 V
表面贴装：	NO	技术：	AVALANCHE
端子面层：	TIN LEAD	端子形式：	WIRE
端子位置：	AXIAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

14KESD12TR 数据手册

14KESD5.0 thru 14KESD170CA

AXIAL-LEAD TVS

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These small axial-leaded TVS devices feature the ability to clamp

dangerous high voltage, short-term transients such as produced by directed

or radiated electrostatic discharge phenomena before entering sensitive

component regions of a circuit design. They are small economical transient

voltage suppressors targeted primarily for short-term transients below a few

microseconds while still achieving significant peak-pulse-power capability

as illustrated in Figure #1.

DO-41

(DO-204AL)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Excellent protection in clamping direct ESD level

transients in excess of 40,000 V per MIL-STD-750,

Method 1020 (approx. 150 ns exponential wave)

Absorbs ESD level transients* of 14,000 Watts per

MIL-STD-750, Method 1020 (approximately 150 ns

exponential wave, or one microsecond transients

up to 4000 watts. See Figure #1 and #2 for overall

transient Peak Pulse Power.

•

Protects Sensitive circuits from short duration fast

rise time transients such as Electrostatic Discharge

(ESD) or Electrical Fast Transients (EFT)

Minimal capacitance (See Figure #3)

Flexible axial-lead mounting terminals

•

Bidirectional features available by adding a “C” or

“CA” suffix

•

Clamps Transients in less than 100 picoseconds

Working Stand-off Voltage range of 5V to 170V

Hermetic DO-41 Package. Also available in surface

mount DO-213AB MELF package (see separate

data sheet)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

4000 Watts for One Microsecond Square Wave or

14,000 watts per ESD Wave form of MIL-STD-750,

method 1020.

•

CASE: Hermetically sealed axial-lead glass DO-41

(DO-204AL) package

TERMINALS: Leads, tin-lead plated solderable per

MIL-STD-750, method 2026

POLARITY: Banded end is cathode

WEIGHT: 0.378 grams (typical)

MARKING: Part number

•

See Surge Rating curve in Figures #1 and 2.

Operating and storage temperature –65^oC to 175^oC

•

THERMAL RESISTANCE: Less than 83^oC/Watt

junction to lead at 0.375 inches from body.

•

DC power dissipation 1500 mW at T_L= 75^oC at 3/8

inch (10 mm) lead length from body.

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

Derate at 22.8 W/^oC above 25^oC for P_PP(1µs) and

•

See package dimension on last page

at 15 mW/^oC above 75^oC for dc power.

Forward Surge Current 500 amps for 1µs at T_L=

25^oC (rise time > 100 ns).

Microsemi

Page 1

10-03-2003 REV A

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与14KESD12TR相关器件

型号	品牌	获取价格	描述	数据表
14KESD12TRE3	MICROSEMI	获取价格	Transient Suppressor,
14KESD13	MICROSEMI	获取价格	AXIAL LEAD
14KESD130	MICROSEMI	获取价格	AXIAL LEAD
14KESD130A	MICROSEMI	获取价格	AXIAL LEAD
14KESD130AE3	MICROSEMI	获取价格	暂无描述
14KESD130AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO
14KESD130ATR	MICROSEMI	获取价格	暂无描述
14KESD130C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, DO-
14KESD130CATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, DO-
14KESD130CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 4000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, DO-

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