Datasheet > 13001B

13001B

更新时间： 2024-11-11 00:04:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
2页	337K
描述
(HAROM) TO-92 Plastic-Encapsulate Transistors

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13001B 数据手册

CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD

TO-92 Plastic-Encapsulate Transistors

w w w . h a r o m . c n

3DD13001B TRANSISTOR (NPN)

TO-92

FEATURE

· power switching applications

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

600

Units

Collector -Base Voltage

Collector-Emitter Voltage

400

1 2 3

Emitter-Base Voltage

Collector Current -Continuous

0.2

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature

0.75

150

℃

T_J

T_stg

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

600

400

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 100μA , I_E=0

I_C= 1mA , I_B=0

I_E= 100μA, I_C=0

V_CB= 600V , I_E=0

V_CE= 400V, I_B=0

100

200

100

μA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

V_EB

7V, I_C=0

h_FE(1)

V_CE= 20V, I_C= 20mA

V_CE= 10V, I_C= 0.25 mA

I_C= 50mA, I_B= 10 mA

I_C= 50 mA, I_B= 10mA

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

0.5

1.2

V_CE= 20V, I_C=20mA

f = 1MHz

Transition frequency

f_T

MHz

Fall time

t_f

0.3

1.5

μs

I_C=50mA, _B1=-I_B2=5mA,

V_CC=45V

Storage time

t_S

CLASSIFICATION OF h^FE

(1)

Range

10-13

13-16

16-19

19-22

22-25

25-28

28-31

31-34

34-37

37-40

中文翻译

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