Datasheet > 11EQS03

11EQS03

更新时间： 2024-11-02 12:57:11

品牌	Logo	应用领域
森美特 - SUNMATE		二极管
页数	文件大小	规格书
2页	1503K
描述
1A Plug-in Schottky diode 30V R-1 series

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11EQS03 数据手册

11EQS03 - 11EQS10

SCHOTTKY BARRIER RECTIFIER DIODES

VOLTAGE RANGE: 30 - 100V

CURRENT: 1.0 A

R-1

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

1.0 (25.4)

MIN.

High Current Capability

Low Power Loss, High Efficiency

High Surge Current Capability

0.102 (2.6)

0.091 (2.3)

DIA.

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

0.140(3.50)

0.114(2.90)

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

Protection Applications

Mechanical Data

1.0 (25.4)

MIN.

Case: R-1 molded plastic body

Terminals: Plated axial leads, solderable

per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight:0.007 ounce, 0.20 grams

0.025 (0.60)

0.021 (0.50)

DIA.

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics ^T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteristic

Symbol

11EQS03

11EQS04

11EQS06

11EQS10

100

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_L= 100°C

(Note 1)

1.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

C^j

0.50

0.70

0.85

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.5

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 1)

Operating and Storage Temperature Range

110

R^ꢀ^JL

R^ꢀ^JA

°C/W

°C

T^j, T^STG

-65 to +150

Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

1 of 2

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与11EQS03相关器件

型号	品牌	获取价格	描述	数据表
11EQS03L	NIEC	获取价格	Low Forward Voltage drop Diode
11EQS03L	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
11EQS03LTA1B2	NIEC	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon,
11EQS03LTA2B5	NIEC	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon
11EQS03TA1B2	NIEC	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, MINIATURE PACKAGE-2
11EQS03TA2B5	NIEC	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, MINIATURE PACKAGE-2
11EQS04	NIEC	获取价格	SBD
11EQS04	SUNMATE	获取价格	1A Plug-in Schottky diode 40V R-1 series
11EQS04	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
11EQS04_15	NI	获取价格	SBD

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