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111RIA120 PDF预览

111RIA120

更新时间: 2024-01-30 10:00:36
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极
页数 文件大小 规格书
8页 120K
描述
PHASE CONTROL THYRISTORS

111RIA120 技术参数

生命周期:Active零件包装代码:TO-94
包装说明:POST/STUD MOUNT, O-MUPM-H3针数:3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.68Is Samacsys:N
配置:SINGLE最大直流栅极触发电流:120 mA
JEDEC-95代码:TO-209ACJESD-30 代码:O-MUPM-H3
元件数量:1端子数量:3
最高工作温度:140 °C最低工作温度:-40 °C
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT认证状态:Not Qualified
最大均方根通态电流:172 A断态重复峰值电压:1200 V
重复峰值反向电压:1200 V表面贴装:NO
端子形式:HIGH CURRENT CABLE端子位置:UPPER
触发设备类型:SCRBase Number Matches:1

111RIA120 数据手册

 浏览型号111RIA120的Datasheet PDF文件第1页浏览型号111RIA120的Datasheet PDF文件第2页浏览型号111RIA120的Datasheet PDF文件第4页浏览型号111RIA120的Datasheet PDF文件第5页浏览型号111RIA120的Datasheet PDF文件第6页浏览型号111RIA120的Datasheet PDF文件第7页 
110/111RIA Series  
Bulletin I25204 rev& B 09/03  
Blocking  
Parameter  
110/111RIA  
Units Conditions  
V/µs TJ = TJ maxꢀ linear to 80% rated VDRM  
dv/dt Maximum critical rate of rise of  
off-state voltage  
500  
IRRM  
IDRM  
Maxꢀ peak reverse and off-state  
leakage current  
20  
mA  
TJ = TJ max, rated VDRM/VRRM applied  
Triggering  
Parameter  
Maximum peak gate power  
PG(AV) Maximum average gate power  
IGM Maxꢀ peak positive gate current  
110/111RIA  
Units Conditions  
PGM  
12  
3ꢀ0  
3ꢀ0  
TJ = TJ max, t 5ms  
p
W
A
TJ = TJ max, f = 50Hz, d% = 50  
TJ = TJ max, t 5ms  
p
+VGM Maximum peak positive  
gate voltage  
20  
10  
V
TJ = TJ max, t 5ms  
p
-VGM Maximum peak negative  
gate voltage  
TYPꢀ  
MAXꢀ  
IGT  
DC  
180 gate  
-
J = - 40°C  
TJ = 25°C  
TJ = 140°C  
J = - 40°C  
current  
requiredT  
requiredT  
80  
40  
120  
-
to trigger  
mA  
V
Maxꢀ required gate trigger/ cur-  
rent/ voltage are the lowest value  
which will trigger all units 12V  
VGT  
DC  
gate  
voltage  
2ꢀ5  
1ꢀ6  
1
-
2
-
anode-to-cathode applied  
to trigger  
TJ = 25°C  
TJ = 140°C  
Maxꢀ gate current/ voltage not to  
trigger is the maxꢀ value which  
will not trigger any unit with rated  
VDRM anode-to-cathode applied  
IGD  
DC gate current not to trigger  
DC gate voltage not to trigger  
6ꢀ0  
mA  
V
TJ = TJ max  
VGD  
0ꢀ25  
Thermal and Mechanical Specification  
Parameter  
110/111RIA  
-40 to 140  
Units Conditions  
TJ  
T
Maxoperatingtemperaturerange  
Maxstoragetemperaturerange  
°C  
-40 to 150  
stg  
RthJC Maxthermalresistance,  
0ꢀ27  
DCoperation  
K/W  
junction to case  
RthCS Maxthermalresistance,  
0ꢀ1  
Mounting surface, smooth, flat and greased  
Non lubricated threads  
case to heatsink  
T
Mountingtorque,±10%  
15ꢀ5  
(137)  
14  
Nm  
(lbf-in)  
Lubricated threads  
SeeOutlineTable  
(120)  
130  
wt  
Approximateweight  
Casestyle  
g
TO-209AC(TO-94)  
wwwꢀirfꢀcom  
3

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