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10WQ045FNPBF_11 PDF预览

10WQ045FNPBF_11

更新时间: 2024-11-28 07:24:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 128K
描述
Schottky Rectifier, 10 A

10WQ045FNPBF_11 数据手册

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VS-10WQ045FNPbF  
Vishay Semiconductors  
Schottky Rectifier, 10 A  
FEATURES  
Base  
cathode  
• Popular D-PAK outline  
4, 2  
• Small foot print, surface mountable  
• Low forward voltage drop  
• High frequency operation  
1
3
D-PAK (TO-252AA)  
Anode  
Anode  
• Guard ring for enhanced ruggedness and long term  
reliability  
• Compliant to RoHS Directive 2002/95/EC  
PRODUCT SUMMARY  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
Package  
D-PAK (TO-252AA)  
10 A  
IF(AV)  
VR  
45 V  
DESCRIPTION  
VF at IF  
IRM  
0.53 V  
The VS-10WQ045FN surface mount Schottky rectifier has  
been designed for applications requiring low forward drop  
and small foot prints on PC board. Typical applications are  
in disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
15 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Single die  
20 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
10  
UNITS  
Rectangular waveform  
A
V
45  
tp = 5 μs sine  
10 Apk, TJ = 125 °C  
Range  
400  
A
VF  
0.53  
V
TJ  
- 40 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-10WQ045FNPbF  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 157 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
10  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
400  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 3 A, L = 4.4 mH  
75  
20  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
3.0  
Document Number: 94122  
Revision: 14-Jan-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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