VS-10WQ045FNPbF
Vishay Semiconductors
Schottky Rectifier, 10 A
FEATURES
Base
cathode
• Popular D-PAK outline
4, 2
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
1
3
D-PAK (TO-252AA)
Anode
Anode
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Package
D-PAK (TO-252AA)
10 A
IF(AV)
VR
45 V
DESCRIPTION
VF at IF
IRM
0.53 V
The VS-10WQ045FN surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC board. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
15 mA at 125 °C
175 °C
TJ max.
Diode variation
EAS
Single die
20 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
10
UNITS
Rectangular waveform
A
V
45
tp = 5 μs sine
10 Apk, TJ = 125 °C
Range
400
A
VF
0.53
V
TJ
- 40 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-10WQ045FNPbF
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
45
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 157 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
See fig. 5
IF(AV)
10
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Following any rated
load condition and with
rated VRRM applied
5 μs sine or 3 μs rect. pulse
400
IFSM
A
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 3 A, L = 4.4 mH
75
20
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
3.0
Document Number: 94122
Revision: 14-Jan-11
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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