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10WQ045FNTRPBF PDF预览

10WQ045FNTRPBF

更新时间: 2024-11-26 07:24:47
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
7页 128K
描述
Schottky Rectifier, 10 A

10WQ045FNTRPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252AA
包装说明:ROHS COMPLIANT, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.18
Is Samacsys:N其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.53 V
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:400 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-40 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:45 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

10WQ045FNTRPBF 数据手册

 浏览型号10WQ045FNTRPBF的Datasheet PDF文件第2页浏览型号10WQ045FNTRPBF的Datasheet PDF文件第3页浏览型号10WQ045FNTRPBF的Datasheet PDF文件第4页浏览型号10WQ045FNTRPBF的Datasheet PDF文件第5页浏览型号10WQ045FNTRPBF的Datasheet PDF文件第6页浏览型号10WQ045FNTRPBF的Datasheet PDF文件第7页 
VS-10WQ045FNPbF  
Vishay Semiconductors  
Schottky Rectifier, 10 A  
FEATURES  
Base  
cathode  
• Popular D-PAK outline  
4, 2  
• Small foot print, surface mountable  
• Low forward voltage drop  
• High frequency operation  
1
3
D-PAK (TO-252AA)  
Anode  
Anode  
• Guard ring for enhanced ruggedness and long term  
reliability  
• Compliant to RoHS Directive 2002/95/EC  
PRODUCT SUMMARY  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
Package  
D-PAK (TO-252AA)  
10 A  
IF(AV)  
VR  
45 V  
DESCRIPTION  
VF at IF  
IRM  
0.53 V  
The VS-10WQ045FN surface mount Schottky rectifier has  
been designed for applications requiring low forward drop  
and small foot prints on PC board. Typical applications are  
in disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
15 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Single die  
20 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
10  
UNITS  
Rectangular waveform  
A
V
45  
tp = 5 μs sine  
10 Apk, TJ = 125 °C  
Range  
400  
A
VF  
0.53  
V
TJ  
- 40 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-10WQ045FNPbF  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 157 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
10  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
400  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 3 A, L = 4.4 mH  
75  
20  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
3.0  
Document Number: 94122  
Revision: 14-Jan-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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