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10WQ045FNTRR-M3 PDF预览

10WQ045FNTRR-M3

更新时间: 2022-05-13 03:16:17
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 132K
描述
Schottky Rectifier, 10 A

10WQ045FNTRR-M3 数据手册

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VS-10WQ045FN-M3  
Vishay Semiconductors  
Schottky Rectifier, 10 A  
FEATURES  
• Low forward voltage drop  
Base  
cathode  
4, 2  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Halogen-free according to IEC 61249-2-21  
definition  
1
3
D-PAK (TO-252AA)  
Anode  
Anode  
• Popular D-PAK outline  
• Small foot print, surface mountable  
• High frequency operation  
PRODUCT SUMMARY  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
Package  
D-PAK (TO-252AA)  
10 A  
IF(AV)  
• Compliant to RoHS Directive 2002/95/EC  
VR  
45 V  
VF at IF  
IRM  
0.53 V  
DESCRIPTION  
The VS-10WQ045FN-M3 surface mount Schottky rectifier  
has been designed for applications requiring low forward  
drop and small foot prints on PC board. Typical applications  
are in disk drives, switching power supplies, converters,  
freewheeling diodes, battery charging, and reverse battery  
protection.  
15 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Single die  
20 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
10  
UNITS  
Rectangular waveform  
A
V
45  
tp = 5 μs sine  
10 Apk, TJ = 125 °C  
Range  
400  
A
VF  
0.53  
V
TJ  
- 40 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-10WQ045FN-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 157 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
10  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
400  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 3 A, L = 4.4 mH  
75  
20  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
3.0  
Document Number: 93284  
Revision: 03-Nov-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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