Datasheet > 10WQ045FNTRR-M3

10WQ045FNTRR-M3

更新时间： 2022-05-13 03:16:17

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	132K
描述
Schottky Rectifier, 10 A

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10WQ045FNTRR-M3 数据手册

VS-10WQ045FN-M3

Vishay Semiconductors

Schottky Rectifier, 10 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

0.63

0.80

0.53

0.71

UNITS

10 A

T_J= 25 °C

20 A

Maximum forward voltage drop

See fig. 1

(1)

V_FM

10 A

T_J= 125 °C

20 A

T_J= 25 °C

Maximum reverse leakage current

See fig. 2

(1)

I_RM

V_R= Rated V_R

T_J= 125 °C

Threshold voltage

V_F(TO)

r_t

0.255

T_J= T_Jmaximum

Forward slope resistance

Typical junction capacitance

Typical series inductance

m

C_T

V_R= 5 V_DC(test signal range 100 kHz to 1 MHz), 25 °C

Measured lead to lead 5 mm from package body

760

5.0

L_S

Note

(1)

Pulse width < 300 μs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

T_J⁽¹⁾, T_Stg

- 40 to 175

°C

Maximum thermal resistance,

junction to case

DC operation

See fig. 4

R_thJC

R_thJA

2.0

°C/W

Maximum thermal resistance,

junction to ambient

0.3

Approximate weight

Marking device

0.01

oz.

Case style D-PAK (similar to TO-252AA)

10WQ045FN

Note

dP_tot

(1)

------------- < -------------- thermal runaway condition for a diode on its own heatsink

dT_JR_thJA

www.vishay.com

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Document Number: 93284

Revision: 03-Nov-10

123 4 5 6 7

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