Datasheet > 10N60G

10N60G

更新时间： 2024-09-16 01:11:35

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
8页	2728K
描述
N-CHANNEL POWER MOSFET

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10N60G 数据手册

10N60 Series

N-CHANNEL POWER MOSFET

Features

Pin Definition:

<0.9Ω @ V =10V

DS(ON) GS

●

Fast switching capability

1. Gate

2. Drain

3. Source

Low gate charge

Lead free in compliance with EU RoHS directive.

Green molding compound

Mechanical Data

●

Case: TO-220,ITO-220,TO-262,TO-263 Package

Block Diagram

Ordering Information

Package

Part No.

10N60T

10N60F

10N60K

10N60G

Packing

TO-220

ITO-220

TO-262

TO-263

50pcs / Tube

T_A= 25ꢀC unless otherwise specified

Maximum Ratings

PARAMETER

SYMBOL

RATINGS

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

±30

I_D

Continuous Drain Current

I_DM

Pulsed Drain Current (Note 2)

Single Pulsed (Note 3)

700

156

Avalanche Energy

Power Dissipation

E_AS

TO-220/TO-262/TO-263

P_D

ITO-220

Junction Temperature

Operating Temperature

Storage Temperature

T_J

+150

°C

T_OPR

T_STG

-55 ~ +150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by T_J

3. L = 30mH, I_AS= 6.4A, V_DD= 50V, R_G= 25 Ω, Starting T_J= 25°C

12 3 4 5 6 7 8

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