Datasheet > 10A1

10A1

更新时间： 2024-11-23 07:24:39

品牌	Logo	应用领域
NAINA		/
页数	文件大小	规格书
2页	112K
描述
Silicon Rectifier, 10.0A

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数据手册

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10A1 数据手册

10A05 - 10A10

Naina Semiconductor Ltd.

Silicon Rectifier, 10.0A

Features

•

Diffused junction

Low cost

Low reverse leakage current

High current capability & low forward voltage drop

Plastic material carrying UL recognition 94V-0

Polarity: Color Band denotes Cathode

Lead free finish

Thermal and Mechanical Specifications (T_A= 25⁰C unless otherwise

specified)

Symbol

Values

Units

Parameters

Maximum operating junction

temperature range

- 55 to +

125

T_J

⁰C

Maximum storage temperature

range

- 55 to +

150

T_Stg

⁰C

Typical thermal resistance junction

to ambient

JEDEC R-6

R_θJA

⁰C/W

Approximate weight

2.1

Electrical Characteristics (T_A= 25⁰C unless otherwise specified)

Parameter

Symbol

Units

10A05 10A1 10A2 10A4 10A6 10A8 10A10

Maximum repetitive peak reverse

voltage

V_RRM

100

200

400

600

800

1000

Maximum RMS voltage

V_RMS

V_DC

140

200

280

400

420

600

560

800

700

Maximum DC blocking voltage

100

1000

Maximum average forward output

current @ T_A= 50⁰C

I_F(AV)

600

1.0

Peak forward surge current (8.3ms)

single half sine-wave superimposed

on rated load

I_FSM

Maximum DC forward voltage drop

per element @ 10 A

V_F

Typical junction capacitance

150

T_A= 25⁰C

Maximum DC reverse

current at rated DC

blocking voltage

I_R

µA

T_A= 100⁰C

100

D-95, Sector 63, Noida – 201301, India

•

Tel: 0120-4205450

•

Fax: 0120-4273653

sales@nainasemi.com

• www.nainasemi.com

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