10A05 - 10A10
AXIAL LEADED SILICON RECTIFIER DIODES
VOLTAGE RANGE: 50 - 1000V
CURRENT: 10.0 A
Features
!
Diffused Junction
!
!
!
!
Low Forward Voltage Drop
High Current Capability
High Reliability
A
A
B
High Surge Current Capability
Mechanical Data
C
! Case:R-6 Molded Plastic
D
Terminals: Axial Leads, Solderable per
MIL-STD-202, Method 208
!
R-6
!
!
Dim
A
Min
25.4
8.6
Max
—
Polarity: Color Band Indicates Cathode
Approx. Weight: 1.7 grams
B
9.1
1.3
! Mounting Position: Any
C
1.2
All Dimensions in mm
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Characteristic
Symbol 10A05
10A1
10A2
10A4
10A6
10A8
10A10
Unit
RRM
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RWM
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
V
R
V
R(RMS)
RMS Reverse Voltage
V
280
10
V
A
Average Rectified Output Current
(Note 1)
I
O
@TA = 50°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
FSM
FM
I
600
1.0
A
Forward Voltage
@IF = 10A
V
V
Peak Reverse Current
At Rated DC Blocking Voltage @TA = 100°C
@TA = 25°C
10
100
RM
I
µA
pF
j
Typical Junction Capacitance (Note 2)
C
150
80
Typical Thermal Resistance Junction to Ambient
(Note 1)
JA
Rꢀ
10
°C/W
j
Operating Temperature Range
Storage Temperature Range
T
-50 to +150
-50 to +150
°C
°C
STG
T
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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