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10A10(G) PDF预览

10A10(G)

更新时间: 2024-11-23 13:02:51
品牌 Logo 应用领域
鲁光 - LGE /
页数 文件大小 规格书
2页 157K
描述
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10A10(G) 技术参数

Case Style:R-6IF(A):10
Maximum recurrent peak reverse voltage:1000Peak forward surge current:400
Maximum instantaneous forward voltage:1.0@IVA(A):10.0
Maximum reverse current:10.0TRR(nS):/
class:Diodes

10A10(G) 数据手册

 浏览型号10A10(G)的Datasheet PDF文件第2页 
10A05C-10A100C  
Plastic Silicon Rectifiers  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 10.0 A  
TO-220AB  
Features  
Low cost  
Diffused junction  
4.5± 0.2  
10.2± 0.2  
1.4± 0.2  
? 3.8± 0.15  
Low leakage  
Low forward voltage drop  
High current capability  
Easilycleaned witn Freon,Alcohol,lsopropanol  
PIN  
3
1
2
2.6± 0.2  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
0.9± 0.1  
0.5± 0.1  
2.5± 0.1  
Mechanical Data  
PIN 1  
PIN 3  
CASE  
PIN 2  
Case:JEDEC TO-220AB,molded plastic  
Polarity: Color band denotes cathode  
Weight: 0.071 ounces,2.006 grams  
Mounting position: Any  
Dimensions in millimeters  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
10A05C 10A10C 10A20C 10A40C 10A60C 10A80C 10A100C UNITS  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
VRRM  
VRMS  
VDC  
V
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forw ard rectified current  
A
10.0  
IF(AV)  
9.5mm lead length,  
@TA=75  
Peak forw ard surge current  
IFSM  
A
V
8.3ms single half-sine-w ave  
400.0  
1.0  
superimposed on rated load @TJ=125  
Maximum instantaneous forw ard voltage  
VF  
@ 5.0 A  
Maximum reverse current  
@TA=25  
10.0  
100.0  
IR  
µA  
at rated DC blocking voltage @TA=100  
pF  
Typical junction capacitance  
Typical thermal resistance  
(Note1)  
(Note2)  
120  
CJ  
10  
Rθ  
/W  
JA  
Operating junction temperature range  
Storage temperature range  
- 55 ---- + 150  
- 55 ---- + 150  
TJ  
TSTG  
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Thermal resistance f rom junction to ambient.  
http://www.luguang.cn  
mail:lge@luguang.cn  

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