Datasheet > 10A1(G)

10A1(G)

更新时间： 2024-11-23 14:38:55

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技术参数
数据手册

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10A1(G) 技术参数

Case Style：	R-6	IF（A）：	10
Maximum recurrent peak reverse voltage：	100	Peak forward surge current：	400
Maximum instantaneous forward voltage：	1.0	@IVA(A)：	10.0
Maximum reverse current：	10.0	TRR(nS)：	/
class：	Diodes

10A1(G) 数据手册

10A05-10A10

10.0AMP Silicon Rectifiers

Voltage Range

50 TO 1000 Volts

Current

10.0 Amperes

R-6

Features

Low forward voltage drop

ꢀ

High current capability

High reliability

High surge current capability

Mechanical Data

ꢀ

Case: Molded plastic

Polarity: Color band denotes cathode end

Mounting position: Any

Weight: 1.65 grams

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

10A05 10A1 10A2 10A4

10A6 10A8 10A10 UNITS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Rectified Current

.375"(9.5mm) Lead Length at Ta=60 C

10.0

400

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Instantaneous Forward Voltage at 10.0A

1.0

Maximum DC Reverse Current

Ta=25 C

10.0

µA

at Rated DC Blocking Voltage

Typical Junction Capacitance (Note 1)

Ta=100 C

400

µA

100

Typical Thermal Resistance RθJA (Note 2)

Operating and Storage Temperature Range T^J, T^STG

C/W

-65 +150

1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.

NOTES:

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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